Datasheet BDW42G (NPN), BDW46G, BDW47G (PNP) (ON Semiconductor) - 4

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BDW42G (NPN), BDW46G, BDW47G (PNP) ACTIVE−REGION SAFE OPERATING AREA
50 50 0.1 ms 0.1 ms 20 20 TJ = 25°C 10 T 1.0 ms J = 25°C 10 (AMP) 1.0 ms 0.5 ms (AMP) 0.5 ms 5.0 5.0 SECOND BREAKDOWN LIMIT dc SECOND BREAKDOWN LIMIT 2.0 BONDING WIRE LIMIT 2.0 BONDING WIRE LIMIT dc 1.0 THERMAL LIMITED OR CURRENT 1.0 THERMAL LIMITED OR CURRENT @ TC = 25°C (SINGLE PULSE) @ T 0.5 C = 25°C (SINGLE PULSE) 0.5 0.2 , COLLECT 0.2 , COLLECT I C I C 0.1 BDW46 0.1 BDW42 BDW47 0.05 0.05 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 5. BDW42 Figure 6. BDW46 and BDW47
There are two limitations on the power handling ability of a Second breakdown pulse limits are valid for duty cycles to transistor: average junction temperature and second 10% provided TJ(pk) ≤ 200°C. TJ(pk) may be calculated from breakdown. Safe operating area curves indicate IC − VCE limits the data in Figure 4. At high case temperatures, thermal of the transistor that must be observed for reliable operation; limitations will reduce the power that can be handled to values i.e., the transistor must not be subjected to greater dissipation less than the limitations imposed by second breakdown. than the curves indicate. The data of Figure 5 and 6 is based on *Linear extrapolation TJ(pk) = 200°C; TC is variable depending on conditions. 10,000 300 5000 TJ = + 25°C GAIN 3000 200 2000 1000 CURRENT 500 ANCE (pF) C 300 100 T ob 200 J = 25°C V ACIT CE = 3.0 V C 100 I 70 ib C = 3.0 A C, CAP , SMALL-SIGNAL 50 50 FE 30 BDW46, 47 (PNP) h BDW46, 47 (PNP) 20 BDW42 (NPN) BDW42 (NPN) 10 30 1.0 2.0 5.0 10 20 50 100 200 500 1000 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f, FREQUENCY (kHz) VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Small−Signal Current Gain Figure 8. Capacitance www.onsemi.com 4