Datasheet BDW42G (NPN), BDW46G, BDW47G (PNP) (ON Semiconductor)
Fabricante | ON Semiconductor |
Descripción | Darlington Complementary Silicon Power Transistors |
Páginas / Página | 8 / 1 — www.onsemi.com. 15 AMP DARLINGTON. Features. COMPLEMENTARY SILICON. POWER … |
Revisión | 17 |
Formato / tamaño de archivo | PDF / 239 Kb |
Idioma del documento | Inglés |
www.onsemi.com. 15 AMP DARLINGTON. Features. COMPLEMENTARY SILICON. POWER TRANSISTORS. 80−100 VOLT, 85 WATT. MAXIMUM RATINGS. Rating
Línea de modelo para esta hoja de datos
Versión de texto del documento
BDW42G (NPN), BDW46G,BDW47G (PNP) Darlington Complementary Silicon Power Transistors This series of plastic, medium−power silicon NPN and PNP Darlington transistors are designed for general purpose and low speed
www.onsemi.com
switching applications.
15 AMP DARLINGTON Features
• High DC Current Gain − h
COMPLEMENTARY SILICON
FE = 2500 (typ) @ IC = 5.0 Adc. • Collector Emitter Sustaining Voltage @ 30 mAdc:
POWER TRANSISTORS
VCEO(sus) = 80 Vdc (min) − BDW46
80−100 VOLT, 85 WATT
100 Vdc (min) − BDW42/BDW47 • Low Collector Emitter Saturation Voltage VCE(sat) = 2.0 Vdc (max) @ IC = 5.0 Adc 3.0 Vdc (max) @ IC = 10.0 Adc 4 • Monolithic Construction with Built−In Base Emitter Shunt resistors • TO−220 Compact Package • These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
1 2 3
Rating Symbol Value Unit TO−220
Collector-Emitter Voltage VCEO Vdc
CASE 221A
BDW46 80
STYLE 1
BDW42, BDW47 100 Collector-Base Voltage VCB Vdc
MARKING DIAGRAM
BDW46 80 BDW42, BDW47 100 Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 15 Adc BDWxx Base Current IB 0.5 Adc AYWWG Total Device Dissipation PD @ TC = 25°C 85 W Derate above 25°C 0.68 W/°C Operating and Storage Junction TJ, Tstg −55 to +150 °C Temperature Range BDWxx = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the x = 42, 46, or 47 device. If any of these limits are exceeded, device functionality should not be A = Assembly Location assumed, damage may occur and reliability may be affected. Y = Year WW = Work Week G = Pb−Free Package
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit ORDERING INFORMATION
Thermal Resistance, RqJC 1.47 °C/W Junction−to−Case
Device Package Shipping
BDW42G TO−220 50 Units/Rail (Pb−Free) BDW46G TO−220 50 Units/Rail *For additional information on our Pb−Free strategy and soldering details, please (Pb−Free) download the ON Semiconductor Soldering and Mounting Techniques BDW47G TO−220 50 Units/Rail Reference Manual, SOLDERRM/D. (Pb−Free) © Semiconductor Components Industries, LLC, 2016 Publication Order Number:
August, 2016 − Rev. 17 BDW42/D