Datasheet MTP2P50EG (ON Semiconductor) - 6
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 |
| Páginas / Página | 8 / 6 — MTP2P50EG. SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. … |
| Revisión | 7 |
| Formato / tamaño de archivo | PDF / 241 Kb |
| Idioma del documento | Inglés |
MTP2P50EG. SAFE OPERATING AREA. Figure 11. Maximum Rated Forward Biased. Figure 12. Maximum Avalanche Energy versus
Línea de modelo para esta hoja de datos
Versión de texto del documento
MTP2P50EG SAFE OPERATING AREA
10 80 V I GS = 20 V D = 2 A SINGLE PULSE 10 ms TC = 25°C 60 O-SOURCE (mJ) (AMPS) 1 100 ms 1 ms 40 10 ms dc 0.1 , DRAIN CURRENT ALANCHE ENERGY V A 20 I D RDS(on) LIMIT THERMAL LIMIT , SINGLE PULSE DRAIN-T PACKAGE LIMIT E AS 0.01 0 0.1 1 10 100 1000 25 50 75 100 125 150 V T DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) J, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RqJC(t) = r(t) RqJC THERMAL 0.02 D CURVES APPLY FOR POWER 0.01 PULSE TRAIN SHOWN , NORMALIZED EFFECTIVE t1 READ TIME AT t1 SINGLE PULSE r(t) t2 TJ(pk) - TC = P(pk) RqJC(t) TRANSIENT DUTY CYCLE, D = t1/t2 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 t, TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME t 0.25 I p S IS
Figure 14. Diode Reverse Recovery Waveform www.onsemi.com 6
10 80 V I GS = 20 V D = 2 A SINGLE PULSE 10 ms TC = 25°C 60 O-SOURCE (mJ) (AMPS) 1 100 ms 1 ms 40 10 ms dc 0.1 , DRAIN CURRENT ALANCHE ENERGY V A 20 I D RDS(on) LIMIT THERMAL LIMIT , SINGLE PULSE DRAIN-T PACKAGE LIMIT E AS 0.01 0 0.1 1 10 100 1000 25 50 75 100 125 150 V T DS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) J, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased Figure 12. Maximum Avalanche Energy versus Safe Operating Area Starting Junction Temperature
1 D = 0.5 ANCE 0.2 RESIST 0.1 P(pk) 0.1 0.05 RqJC(t) = r(t) RqJC THERMAL 0.02 D CURVES APPLY FOR POWER 0.01 PULSE TRAIN SHOWN , NORMALIZED EFFECTIVE t1 READ TIME AT t1 SINGLE PULSE r(t) t2 TJ(pk) - TC = P(pk) RqJC(t) TRANSIENT DUTY CYCLE, D = t1/t2 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 t, TIME (s)
Figure 13. Thermal Response
di/dt IS trr ta tb TIME t 0.25 I p S IS
Figure 14. Diode Reverse Recovery Waveform www.onsemi.com 6