Datasheet MTP2P50EG (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 |
| Páginas / Página | 8 / 1 — 2 Amps, 500 Volts, P−Channel TO−220. www.onsemi.com. 2 AMPERES, 500 … |
| Revisión | 7 |
| Formato / tamaño de archivo | PDF / 241 Kb |
| Idioma del documento | Inglés |
2 Amps, 500 Volts, P−Channel TO−220. www.onsemi.com. 2 AMPERES, 500 VOLTS. DS(on) = 6. P−Channel. Features. MARKING DIAGRAM
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MTP2P50EG Power MOSFET
2 Amps, 500 Volts, P−Channel TO−220
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
www.onsemi.com
The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching
2 AMPERES, 500 VOLTS
applications in power supplies, converters and PWM motor controls,
R
these devices are particularly well suited for bridge circuits where
DS(on) = 6
W diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
P−Channel
D
Features
• Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete G Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits S • IDSS and VDS(on) Specified at Elevated Temperature • This is a Pb−Free Device*
MARKING DIAGRAM AND PIN ASSIGNMENT MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) 4
Rating Symbol Value Unit
4 Drain Drain−Source Voltage VDSS 500 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 500 Vdc Gate−Source Voltage − Continuous V
TO−220AB
GS ±20 Vdc MTP − Non−Repetitive (t
CASE 221A
p ≤ 10 ms) VGSM ±40 Vpk 2P50EG
STYLE 5
AYWW Drain Current − Continuous ID 2.0 Adc Drain Current − Continuous @ 100°C I 1 D 1.6 2 Drain Current − Single Pulse (tp ≤ 10 ms) IDM 6.0 Apk 3 Total Power Dissipation PD 75 W 1 3 Derate above 25°C 0.6 W/°C Gate Source 2 Operating and Storage Temperature Range T Drain J, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche EAS 80 mJ MTP2P50E = Device Code Energy − Starting TJ = 25°C A = Assembly Location (VDD = 100 Vdc, VGS = 10 Vdc, Y = Year IL = 4.0 Apk, L = 10 mH, RG = 25 W) WW = Work Week Thermal Resistance °C/W G = Pb−Free Package − Junction−to−Case RqJC 1.67 − Junction−to−Ambient RqJA 62.5 Maximum Lead Temperature for Soldering TL 260 °C
ORDERING INFORMATION
Purposes, 1/8″ from case for 10 sec
Device Package Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MTP2P50EG TO−220AB 50 Units/Rail assumed, damage may occur and reliability may be affected. (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2015 − Rev. 7 MTP2P50E/D
2 Amps, 500 Volts, P−Channel TO−220
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition, this Power MOSFET is designed to withstand high energy in the avalanche and commutation modes.
www.onsemi.com
The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for high voltage, high speed switching
2 AMPERES, 500 VOLTS
applications in power supplies, converters and PWM motor controls,
R
these devices are particularly well suited for bridge circuits where
DS(on) = 6
W diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
P−Channel
D
Features
• Robust High Voltage Termination • Avalanche Energy Specified • Source−to−Drain Diode Recovery Time Comparable to a Discrete G Fast Recovery Diode • Diode is Characterized for Use in Bridge Circuits S • IDSS and VDS(on) Specified at Elevated Temperature • This is a Pb−Free Device*
MARKING DIAGRAM AND PIN ASSIGNMENT MAXIMUM RATINGS
(TC = 25°C unless otherwise noted) 4
Rating Symbol Value Unit
4 Drain Drain−Source Voltage VDSS 500 Vdc Drain−Gate Voltage (RGS = 1.0 MW) VDGR 500 Vdc Gate−Source Voltage − Continuous V
TO−220AB
GS ±20 Vdc MTP − Non−Repetitive (t
CASE 221A
p ≤ 10 ms) VGSM ±40 Vpk 2P50EG
STYLE 5
AYWW Drain Current − Continuous ID 2.0 Adc Drain Current − Continuous @ 100°C I 1 D 1.6 2 Drain Current − Single Pulse (tp ≤ 10 ms) IDM 6.0 Apk 3 Total Power Dissipation PD 75 W 1 3 Derate above 25°C 0.6 W/°C Gate Source 2 Operating and Storage Temperature Range T Drain J, Tstg −55 to 150 °C Single Pulse Drain−to−Source Avalanche EAS 80 mJ MTP2P50E = Device Code Energy − Starting TJ = 25°C A = Assembly Location (VDD = 100 Vdc, VGS = 10 Vdc, Y = Year IL = 4.0 Apk, L = 10 mH, RG = 25 W) WW = Work Week Thermal Resistance °C/W G = Pb−Free Package − Junction−to−Case RqJC 1.67 − Junction−to−Ambient RqJA 62.5 Maximum Lead Temperature for Soldering TL 260 °C
ORDERING INFORMATION
Purposes, 1/8″ from case for 10 sec
Device Package Shipping
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be MTP2P50EG TO−220AB 50 Units/Rail assumed, damage may occur and reliability may be affected. (Pb−Free) *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015
1
Publication Order Number:
January, 2015 − Rev. 7 MTP2P50E/D