Datasheet MTP2P50EG (ON Semiconductor) - 3
| Fabricante | ON Semiconductor |
| Descripción | Power MOSFET 2 Amps, 500 Volts, P−Channel TO−220 |
| Páginas / Página | 8 / 3 — MTP2P50EG. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region … |
| Revisión | 7 |
| Formato / tamaño de archivo | PDF / 241 Kb |
| Idioma del documento | Inglés |
MTP2P50EG. TYPICAL ELECTRICAL CHARACTERISTICS. Figure 1. On−Region Characteristics. Figure 2. Transfer Characteristics
Línea de modelo para esta hoja de datos
Versión de texto del documento
MTP2P50EG TYPICAL ELECTRICAL CHARACTERISTICS
4 4 TJ = 25°C VGS = 10 V 7 V VDS ≥ 10 V 3.5 3.5 8 V 3 3 100°C (AMPS) 6 V (AMPS) TJ = - 55°C 2.5 2.5 25°C 2 2 1.5 1.5 , DRAIN CURRENT 5 V , DRAIN CURRENT 1 1 I D I D 0.5 0.5 4 V 0 0 0 4 8 12 16 20 24 28 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
10 6 VGS = 10 V TJ = 25°C 5.75 TJ = 100°C 8 ANCE (OHMS) ANCE (OHMS) 5.5 6 5.25 25°C 5 VGS = 10 V 4 O‐SOURCE RESIST 4.75 O‐SOURCE RESIST - 55°C 15 V 4.5 2 , DRAIN‐T , DRAIN‐T 4.25 DS(on) 0 DS(on) 4 R R 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2 1000 VGS = 0 V V ANCE GS = 10 V ID = 1 A TJ = 125°C 1.5 100 100°C O‐SOURCE RESIST , LEAKAGE (nA) (NORMALIZED) 1 10 I DSS , DRAIN‐T 25°C DS(on)R 0.5 1 - 50 - 25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage www.onsemi.com 3
4 4 TJ = 25°C VGS = 10 V 7 V VDS ≥ 10 V 3.5 3.5 8 V 3 3 100°C (AMPS) 6 V (AMPS) TJ = - 55°C 2.5 2.5 25°C 2 2 1.5 1.5 , DRAIN CURRENT 5 V , DRAIN CURRENT 1 1 I D I D 0.5 0.5 4 V 0 0 0 4 8 12 16 20 24 28 2 2.5 3 3.5 4 4.5 5 5.5 6 6.5 7 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
10 6 VGS = 10 V TJ = 25°C 5.75 TJ = 100°C 8 ANCE (OHMS) ANCE (OHMS) 5.5 6 5.25 25°C 5 VGS = 10 V 4 O‐SOURCE RESIST 4.75 O‐SOURCE RESIST - 55°C 15 V 4.5 2 , DRAIN‐T , DRAIN‐T 4.25 DS(on) 0 DS(on) 4 R R 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current Figure 4. On−Resistance versus Drain Current and Temperature and Gate Voltage
2 1000 VGS = 0 V V ANCE GS = 10 V ID = 1 A TJ = 125°C 1.5 100 100°C O‐SOURCE RESIST , LEAKAGE (nA) (NORMALIZED) 1 10 I DSS , DRAIN‐T 25°C DS(on)R 0.5 1 - 50 - 25 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 450 500 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with Figure 6. Drain−To−Source Leakage Temperature Current versus Voltage www.onsemi.com 3