Datasheet T1635H-8I (STMicroelectronics) - 5

360° T1635H-8I Characteristics (curves) Figure 8. Relative variation of holding current and Figure 7. Relative variation of gate trigger voltage and latching current versus junction temperature (typical current versus junction temperature (typical values) values)
IGT,VGT[Tj] / IGT,VGT[Tj = 25 °C] IH,IL [Tj] / IH,IL [Tj = 25 °C] 2.5 1.6 2 IGT Q3 1.2 1.5 IGT Q1-Q2 0.8 IL 1 VGT Q1-Q2-Q3 0.4 IH 0.5 Tj (°C) Tj (°C) 0 0 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Figure 9. Surge peak on-state current versus number of Figure 10. Non repetitive surge peak on-state current for a cycles sinusoidal pulse with width tp < 10 ms
I I TSM(A) TSM(A) 10000 200 dl/dt limitation: 100 A/µs Tj initial = 25 °C t=20ms 150 Non repetitive One cycle 1000 Tj initial = 25 °C 100 ITSM 100 50 Repetitive Tc = 115°C Number of cycles 0 tp(ms) 1 10 100 1000 10 0.01 0.10 1.00 10.00
Figure 11. Relative variation of static dV/dt immunity versus junction temperature Figure 12. Relative variation of critical rate of decrease of main current versus junction temperature
(dl/dt)c [Tj] / (dl/dt)c [Tj = 150 °C] dV/dt [Tj] / dV/dt [Tj = 150 °C] 14 4 VD = VR = 536 V 12 3 10 8 2 6 4 1 2 T 0 j(°C) 0 Tj(°C) 25 50 75 100 125 150 25 50 75 100 125 150
DS13133
-
Rev 2 page 5/11
α Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history