Datasheet T1635H-8I (STMicroelectronics) - 4

T1635H-8I Characteristics (curves) 1.1 Characteristics (curves) Figure 1. Maximum power dissipation versus on-state Figure 2. On-state RMS current versus case temperature RMS current
IT(RMS)(A) P(W) 20 20 α = 180° α = 180° 15 15 10 10 5 5 180° Tc(°C) IT(RMS)(A) 0 0 0 25 50 75 100 125 150 0 2 4 6 8 10 12 14 16
Figure 3. On-state RMS current versus ambient Figure 4. On-state characteristics (maximum values) temperature (free air convection)
ITM(A) IT(RMS)(A) 1000 3.5 Tj max. V α = 180° to = 0.8 V 3 Rd = 23 mΩ 2.5 100 2 Tj = 150 °C 1.5 10 1 Tj = 25 °C 0.5 Ta(°C) VTM(V) 1 0 0 1 2 3 4 5 0 25 50 75 100 125 150
Figure 6. Recommended maximum case-to-ambient Figure 5. Relative variation of thermal impedance versus thermal resistance versus ambient temperature for pulse duration different peak off-state voltages
K = [Zth/Rth] Rth(c-a) (°C/W) (for heatsink sizing to avoid thermal runaway) 70 1.0E+00 Junction-to- ambiant thermal resistance : VDRM=VRRM Typical 60 °C/W (without heatsink) =200 V 60 Zth(j-c) VDRM=VRRM Z V =400 V th(j-a) 50 DRM=VRRM = 600 V 40 1.0E-01 VDRM=VRRM 30 = 800 V 20 tp(s) 10 1.0E-02 With 15°C/W heatsink 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02 1.0E+03 Ta (°C) 0 20 40 60 80 100 120 140
DS13133
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Rev 2 page 4/11
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 TO-220AB insulated package information 3 Ordering information Revision history