Datasheet T835H-8G (STMicroelectronics) - 2
| Fabricante | STMicroelectronics |
| Descripción | 8 A - 800 V - 150°C 8H-Triac in D2PAK |
| Páginas / Página | 12 / 2 — T835H-8G. Characteristics. Table 1. Absolute maximum ratings (limiting … |
| Formato / tamaño de archivo | PDF / 263 Kb |
| Idioma del documento | Inglés |
T835H-8G. Characteristics. Table 1. Absolute maximum ratings (limiting values). Symbol. Parameter. Value. Unit
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T835H-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) Tc = 139 °C 8 A Non repetitive surge peak on-state current (full cycle, t = 16.7 ms 84 ITSM T A j initial = 25 °C) t = 20 ms 80 I2t I2t value for fusing tp = 10 ms 42 A2s Critical rate of rise of on-state current, I dl/dt G = 2 x IGT, tr T ≤ 100 ns, f = 100 Hz j = 25 °C 100 A/µs VDRM/VRRM Repetitive peak off-state voltage 800 V VDSM/VRSM Non Repetitive peak off-state voltage tp = 10 ms, Tj = 25 °C 900 V IGM Peak gate current 4 A tp = 20 µs, Tj = 150 °C PGM Maximum gate power dissipation 5 W PG(AV) Average gate power dissipation Tj = 150 °C 1 W Tstg Storage temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrants Value Unit
Min. 5 mA IGT VD = 12 V, RL = 30 Ω I - II - III Max. 35 mA VGT VD = 12 V, RL = 30 Ω I - II - III Max. 1.3 V VGD VD = VDRM, RL = 3.3 kΩ Tj = 150 °C I - II - III Min. 0.15 V I - III Max. 50 mA IL IG = 1.2 x IGT II Max. 80 mA IH (1) IT = 500 mA, gate open Max. 35 mA dV/dt (1) VD = VR = 536 V, gate open Tj = 150 °C Min. 2000 V/µs (dl/dt)c (1) Without snubber network Tj = 150 °C Min. 8 A/ms 1. For both polarities of A2 referenced to A1.
DS13570
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Rev 2 page 2/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history
T835H-8G Characteristics 1 Characteristics Table 1. Absolute maximum ratings (limiting values) Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) Tc = 139 °C 8 A Non repetitive surge peak on-state current (full cycle, t = 16.7 ms 84 ITSM T A j initial = 25 °C) t = 20 ms 80 I2t I2t value for fusing tp = 10 ms 42 A2s Critical rate of rise of on-state current, I dl/dt G = 2 x IGT, tr T ≤ 100 ns, f = 100 Hz j = 25 °C 100 A/µs VDRM/VRRM Repetitive peak off-state voltage 800 V VDSM/VRSM Non Repetitive peak off-state voltage tp = 10 ms, Tj = 25 °C 900 V IGM Peak gate current 4 A tp = 20 µs, Tj = 150 °C PGM Maximum gate power dissipation 5 W PG(AV) Average gate power dissipation Tj = 150 °C 1 W Tstg Storage temperature range -40 to +150 °C Tj Operating junction temperature range -40 to +150 °C
Table 2. Electrical characteristics (Tj = 25 °C, unless otherwise specified) Symbol Test conditions Quadrants Value Unit
Min. 5 mA IGT VD = 12 V, RL = 30 Ω I - II - III Max. 35 mA VGT VD = 12 V, RL = 30 Ω I - II - III Max. 1.3 V VGD VD = VDRM, RL = 3.3 kΩ Tj = 150 °C I - II - III Min. 0.15 V I - III Max. 50 mA IL IG = 1.2 x IGT II Max. 80 mA IH (1) IT = 500 mA, gate open Max. 35 mA dV/dt (1) VD = VR = 536 V, gate open Tj = 150 °C Min. 2000 V/µs (dl/dt)c (1) Without snubber network Tj = 150 °C Min. 8 A/ms 1. For both polarities of A2 referenced to A1.
DS13570
-
Rev 2 page 2/12
Document Outline 1 Characteristics 1.1 Characteristics (curves) 2 Package information 2.1 D²PAK package information 3 Ordering information Revision history