Datasheet IRG4PH50UDPbF (Infineon) - 7
| Fabricante | Infineon |
| Descripción | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Páginas / Página | 11 / 7 — Fig. 14. Fig. 15. Fig. 16. Fig. 17 |
| Revisión | 01_00 |
| Formato / tamaño de archivo | PDF / 693 Kb |
| Idioma del documento | Inglés |
Fig. 14. Fig. 15. Fig. 16. Fig. 17
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IRG4PH50UDPbF 300 40 V = 200V R V = 200 V R T = J 125°C T = 125°C J T = J 25°C T J = 25°C 30 200 I = 32A F ) s) A I = 16A F ( I F = 3 2 A 20 I = 8.0A trr - (n F RRMI - I = F 16 A 100 I F = 8 .0A 10 0 0 100 1000 100 1000 d if /dt - (A/µs) di f /dt - (A /µs)
Fig. 14
- Typical Reverse Recovery vs. dif/dt
Fig. 15
- Typical Recovery Current vs. dif/dt 1200 1000 V = 200V R T = V = 200V J 125°C R T = T = J 125°C J 25°C T = J 25°C 900 I = 32A F s) /µ nC ( 600 I = 16A F 100 /dt - (A - RR I = 32A F Q c)M I = 8.0A I F =16A F di(re I = 8.0A F 300 0 10 100 1000 100 1000 di f /dt - (A/µ s) di f /dt - (A /µs)
Fig. 16
- Typical Stored Charge vs. dif/dt
Fig. 17
- Typical di(rec)M/dt vs. dif/dt www.irf.com 7
Fig. 14
- Typical Reverse Recovery vs. dif/dt
Fig. 15
- Typical Recovery Current vs. dif/dt 1200 1000 V = 200V R T = V = 200V J 125°C R T = T = J 125°C J 25°C T = J 25°C 900 I = 32A F s) /µ nC ( 600 I = 16A F 100 /dt - (A - RR I = 32A F Q c)M I = 8.0A I F =16A F di(re I = 8.0A F 300 0 10 100 1000 100 1000 di f /dt - (A/µ s) di f /dt - (A /µs)
Fig. 16
- Typical Stored Charge vs. dif/dt
Fig. 17
- Typical di(rec)M/dt vs. dif/dt www.irf.com 7