Datasheet IRG4PH50UDPbF (Infineon) - 6
| Fabricante | Infineon |
| Descripción | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Páginas / Página | 11 / 6 — Fig. 11 -. Fig. 12. Fig. 13 |
| Revisión | 01_00 |
| Formato / tamaño de archivo | PDF / 693 Kb |
| Idioma del documento | Inglés |
Fig. 11 -. Fig. 12. Fig. 13
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IRG4PH50UDPbF 15 R = Ohm G 5.0 Ω 1000 T = 150 C GE J ° V = 20V T = 125 C o V = 480V CC J 12 V = 15V GE 100 9 6 10 3 Total Switching Losses (mJ) I , Collector-to-Emitter Current (A) C 0 SAFE OPERATING AREA 0 10 20 30 40 50 1 I , Collector-to-emitter Current (A) C 1 10 100 1000 10000 V , Collector-to-Emitter Voltage (V) CE
Fig. 11 -
Typical Switching Losses vs.
Fig. 12
- Turn-Off SOA Collector-to-Emitter Current 1000 100 T = 150°C J 10 T = 125°C J T = 25°C J Instantaneous Forward Current ( A ) 1 0.0 2.0 4.0 6.0 8.0 Forward Voltage D rop - V FM (V)
Fig. 13
- Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com
Fig. 11 -
Typical Switching Losses vs.
Fig. 12
- Turn-Off SOA Collector-to-Emitter Current 1000 100 T = 150°C J 10 T = 125°C J T = 25°C J Instantaneous Forward Current ( A ) 1 0.0 2.0 4.0 6.0 8.0 Forward Voltage D rop - V FM (V)
Fig. 13
- Typical Forward Voltage Drop vs. Instantaneous Forward Current 6 www.irf.com