Datasheet IRG4PH40UD2-EP (Infineon) - 4
| Fabricante | Infineon |
| Descripción | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Páginas / Página | 11 / 4 — Fig. 4. Fig. 5. Fig. 6 |
| Revisión | 01_00 |
| Formato / tamaño de archivo | PDF / 242 Kb |
| Idioma del documento | Inglés |
Fig. 4. Fig. 5. Fig. 6
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IRG4PH40UD2-EP 50 4.0 V = 1 GE 5V 80 us PULSE WIDTH I = A 42 C 40 3.0 30 I = A 21 C 20 I = A 10.5 C 2.0 10 CE Maximum DC Collector Current(A) V , Collector-to-Emitter Voltage(V) 0 1.0 25 50 75 100 125 150 -60 -40 -20 0 20 40 60 80 100 120 140 160 T , Case Temperature ( C) C ° T T , Junction Temperature ( C) J J ° , Junction Temperature ( °C )
Fig. 4
- Maximum Collector Current vs. Case
Fig. 5
- Typical Collector-to-Emitter Voltage Temperature vs. Junction Temperature 1 D = 0.50 ) thJC Z 0.20 0.1 sponse ( 0.10 e PDM l R a 0.05 m t1 0.02 t2 Ther SINGLE PULSE 0.01 (THERMAL RESPONSE) Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com
Fig. 4
- Maximum Collector Current vs. Case
Fig. 5
- Typical Collector-to-Emitter Voltage Temperature vs. Junction Temperature 1 D = 0.50 ) thJC Z 0.20 0.1 sponse ( 0.10 e PDM l R a 0.05 m t1 0.02 t2 Ther SINGLE PULSE 0.01 (THERMAL RESPONSE) Notes: 1. Duty factor D = t / t 1 2 2. Peak TJ = PDM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t , Rectangular Pulse Duration (sec) 1
Fig. 6
- Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com