Datasheet IRG4PH40UD2-EP (Infineon) - 5
| Fabricante | Infineon |
| Descripción | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode. UltraFast CoPack IGBT |
| Páginas / Página | 11 / 5 — Fig. 7 -. Fig. 8. Fig. 9. Fig. 10 |
| Revisión | 01_00 |
| Formato / tamaño de archivo | PDF / 242 Kb |
| Idioma del documento | Inglés |
Fig. 7 -. Fig. 8. Fig. 9. Fig. 10
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IRG4PH40UD2-EP 4000 20 VGS = 0V, f = 1 MHZ VCE = 400V C 3500 ies = C ge + Cgd, C ce SHORTED ) IC = 21A C V res = Cgc ( 16 C e 3000 oes = Cce + Cgc g atl ) o F p Cies V 2500 ( r 12 e et c ti n a 2000 m ti E- c o a t 8 p - 1500 a et C a Coes G 1000 , E 4 GV 500 Cres 0 0 0 20 40 60 80 100 120 1 10 Q V G, Total Gate Charge (nC) CE, Collector-toEmitter-Voltage(V)
Fig. 7 -
Typical Capacitance vs.
Fig. 8
- Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage 5 100 VCE = 800V RG = 10 Ω 4.8 VGE = 15V VGE = 15V ) J T V J = 25°C J CC = 800V m( m 4.6 I ( s C = 21A s e e s s s s I o 4.4 o C = 42A L L g g n 10 i ni h 4.2 h ci cti IC = 21A w w S l S a l 4 t a o t I T o T C = 10.5A 3.8 3.6 1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance (Ω) TJ, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Fig. 10
- Typical Switching Losses vs. Resistance Junction Temperature www.irf.com 5
Fig. 7 -
Typical Capacitance vs.
Fig. 8
- Typical Gate Charge vs. Collector-to-Emitter Voltage Gate-to-Emitter Voltage 5 100 VCE = 800V RG = 10 Ω 4.8 VGE = 15V VGE = 15V ) J T V J = 25°C J CC = 800V m( m 4.6 I ( s C = 21A s e e s s s s I o 4.4 o C = 42A L L g g n 10 i ni h 4.2 h ci cti IC = 21A w w S l S a l 4 t a o t I T o T C = 10.5A 3.8 3.6 1 0 10 20 30 40 50 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG, Gate Resistance (Ω) TJ, Junction Temperature (°C)
Fig. 9
- Typical Switching Losses vs. Gate
Fig. 10
- Typical Switching Losses vs. Resistance Junction Temperature www.irf.com 5