Datasheet DFLS2100 (Diodes) - 2
| Fabricante | Diodes |
| Descripción | 2.0A High Voltage Schottky Barrier Rectifier |
| Páginas / Página | 5 / 2 — DFLS2100. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal … |
| Formato / tamaño de archivo | PDF / 208 Kb |
| Idioma del documento | Inglés |
DFLS2100. Maximum Ratings. Characteristic. Symbol. Value. Unit. Thermal Characteristics. Typ. Max. Electrical Characteristics. Min
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DFLS2100 Maximum Ratings
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 100 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 71 V Average Rectified Output Current IO 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms I Single Half Sine-Wave Superimposed on Rated Load FSM 50 A
Thermal Characteristics Characteristic Symbol Typ Max Unit
Thermal Resistance Junction to Soldering (Note 5) RθJS — 7 °C/W Thermal Resistance Junction to Ambient (Note 6) (TA = +25°C) RθJA 125 — °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V(BR)R 100 V IR = 1µA 0.77 I Forward Voltage F = 1.0A VF V 0.86 IF = 2.0A Leakage Current (Note 7) IR 1 µA VR = 100V Total Capacitance CT 36 pF VR = 5VDC, f = 1MHz Notes: 5. Theoretical RθJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction. 6. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 7. Short duration pulse test used to minimize self-heating effect. 2 ) 10 (A T 1.8 N E ) 1 R T = 175 C ° 1.6 R A (W U N C 1.4 IO D T 0.1 R A T = 150 C ° A A 1.2 IP W S R IS 1 O 0.01 T = 125 C ° A D F R S E 0.8 U W O T = 75 C ° A O E 0.001 0.6 N , P A D T P N 0.4 A T = 25 C ° A T 0.0001 S 0.2 , IN T = -55°C I F A 0 0.00001 0 0.5 1 1.5 2 2.5 3 3.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I , AVERAGE FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (V) F(AV) F Fig. 1 Forward Power Dissipation Fig. 2 Typical Forward Characteristics POWERDI is a registered trademark of Diodes Incorporated. DFLS2100 2 of 5 April 2016 Document number: DS31475 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features and Benefits Product Summary Description and Applications Mechanical Data Marking Information Package Outline Dimensions PowerDI123 Suggested Pad Layout
(@TA = +25°C, unless otherwise specified.) Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 100 V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 71 V Average Rectified Output Current IO 2.0 A Non-Repetitive Peak Forward Surge Current 8.3ms I Single Half Sine-Wave Superimposed on Rated Load FSM 50 A
Thermal Characteristics Characteristic Symbol Typ Max Unit
Thermal Resistance Junction to Soldering (Note 5) RθJS — 7 °C/W Thermal Resistance Junction to Ambient (Note 6) (TA = +25°C) RθJA 125 — °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C
Electrical Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7) V(BR)R 100 V IR = 1µA 0.77 I Forward Voltage F = 1.0A VF V 0.86 IF = 2.0A Leakage Current (Note 7) IR 1 µA VR = 100V Total Capacitance CT 36 pF VR = 5VDC, f = 1MHz Notes: 5. Theoretical RθJS calculated from the top center of the die straight down to the PCB/cathode tab solder junction. 6. Part mounted on FR-4 board with 2 oz., minimum recommended copper pad layout, which can be found on our website at http://www.diodes.com/package-outlines.html. 7. Short duration pulse test used to minimize self-heating effect. 2 ) 10 (A T 1.8 N E ) 1 R T = 175 C ° 1.6 R A (W U N C 1.4 IO D T 0.1 R A T = 150 C ° A A 1.2 IP W S R IS 1 O 0.01 T = 125 C ° A D F R S E 0.8 U W O T = 75 C ° A O E 0.001 0.6 N , P A D T P N 0.4 A T = 25 C ° A T 0.0001 S 0.2 , IN T = -55°C I F A 0 0.00001 0 0.5 1 1.5 2 2.5 3 3.5 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 I , AVERAGE FORWARD CURRENT (A) V , INSTANTANEOUS FORWARD VOLTAGE (V) F(AV) F Fig. 1 Forward Power Dissipation Fig. 2 Typical Forward Characteristics POWERDI is a registered trademark of Diodes Incorporated. DFLS2100 2 of 5 April 2016 Document number: DS31475 Rev. 4 - 2
www.diodes.com
© Diodes Incorporated Document Outline Features and Benefits Product Summary Description and Applications Mechanical Data Marking Information Package Outline Dimensions PowerDI123 Suggested Pad Layout