Datasheet 6ED2230S12T (Infineon) - 10

6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Electrical characteristics Table 5 Dynamic electrical characteristics (continued)
VCC = VB = 15 V, VS = COM, TA = 25 oC, and CL = 1000 pF unless otherwise specified.
Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max.
Turn-off fall time tF — 20 — ns Dead time, LO turn-off to HO turn-on & DT 300 460 700 ns HO turn-off to LO turn-on Delay matching time (tON, tOFF) MT — — 130 ns Enable low to output shutdown tEN — 600 — ns propagation delay Input filter time (LIN, HIN, EN) TFIL,IN 200 350 500 ns FAULT clear time TFLTCLR — 1.9 — ms VDD = 3.3V (R = 2 MΩ, C = 1 nF) ITRIP to output shutdown propagation TITRIP — 750 1250 ns VITRIP = 1 V delay ITRIP blanking time TBL — 500 — ns ITRIP to FAULT propagation delay TFLT 450 650 900 ns Datasheet 10 Document Outline Features Typical applications Description Product validation Device information Table of contents 1 Block diagram 2 Lead configuration 3 Absolute maximum ratings 4 Recommended operating conditions 5 Electrical characteristics 5.1 Static electrical characteristics 5.2 Dynamic electrical characteristics 6 Application information and additional details 6.1 IGBT/MOSFET gate drive 6.2 Switching and timing relationships 6.2.1 Deadtime 6.2.2 Matched propagation delays 6.3 Input logic compatibility 6.4 Undervoltage lockout protection 6.5 Shoot-Through protection 6.6 Enable input 6.7 Fault reporting and programmable fault clear timer 6.8 Over-Current protection 6.9 Truth table: Undervoltage lockout, ITRIP, and ENABLE 6.10 Advanced input filter 6.11 Short-Pulse / Noise rejection 6.12 Integrated bootstrap diodes 6.13 Tolerant to negative VS transients 6.14 PCB layout tips 6.15 Additional documentation 7 Package information 7.1 Package information DSO-24 (DSO-28 4 pin removed) 8 Qualification information 9 Related products Revision history Insert from: "6EDL05I12.pdf" 6EDL05I12.vsdx Page-4