Datasheet 6ED2230S12T (Infineon) - 8

FabricanteInfineon
Descripción1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP
Páginas / Página29 / 8 — 6ED2230S12T. 1200 V Three Phase Gate Driver with Integrated Bootstrap …
Revisión01_03
Formato / tamaño de archivoPDF / 3.4 Mb
Idioma del documentoInglés

6ED2230S12T. 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP. Electrical characteristics. 5.1

6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Electrical characteristics 5.1

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6ED2230S12T 1200 V Three Phase Gate Driver with Integrated Bootstrap Diode and OCP Electrical characteristics 5 Electrical characteristics 5.1 Static electrical characteristics Table 4 Static electrical characteristics
(VCC - COM) = (VB - VS) = 15 V. TA = 25 °C unless otherwise specified. The VIN and IIN parameters are referenced to COM. The VO and IO parameters are referenced to respective VS and COM and are applicable to the respective output leads HO or LO. The VCCUV parameters are referenced to COM. The VBSUV parameters are referenced to VS.
Parameter Symbol Values Unit Note or Test Condition Min. Typ. Max.
VBS supply under voltage positive VBSUV+ 9.2 10.4 11.6 V — threshold VBS supply under voltage negative VBSUV- 8.3 9.4 10.5 V — threshold VBS supply under voltage hysteresis VBSUVHY — 1 — V — VCC supply under voltage positive VCCUV+ 10.2 11.4 12.6 V — threshold VCC supply under voltage negative VCCUV- 9.3 10.4 11.5 V — threshold VCC supply under voltage hysteresis VCCUVHY — 1 — V — High level output voltage drop, VBIAS- VOH — 0.35 — V Io = 20 mA VO Low level output voltage drop, VO VOL — 0.15 — V Io = 20 mA Logic “1” input voltage VIH 2.3 — — V — Logic “0” input voltage VIL — — 0.7 V — RFE positive going threshold VRFE+ 1.7 1.9 2.3 V — RFE negative going threshold VRFE- 0.7 0.9 1.1 V — ITRIP positive going threshold VITRIP+ 0.475 0.500 0.525 V — ITRIP negative going threshold VITRIP- 0.425 0.450 0.475 V — ITRIP hysteresis VITRIP HYS — 0.050 — V — High-side floating well offset supply ILK — — 50 µA VB = VS = 1200 leakage V Quiescent VBS supply current IQBS — 175 250 µA VIN = 0 V or 5 V Quiescent VCC supply current IQCC — 1000 1500 µA VIN = 0 V or 5 V Mean output current for load capacity IO+ mean 200 300 — mA C = 22 nF charging from 3 V (20%) to 6 V (40%) Datasheet 8 Document Outline Features Typical applications Description Product validation Device information Table of contents 1 Block diagram 2 Lead configuration 3 Absolute maximum ratings 4 Recommended operating conditions 5 Electrical characteristics 5.1 Static electrical characteristics 5.2 Dynamic electrical characteristics 6 Application information and additional details 6.1 IGBT/MOSFET gate drive 6.2 Switching and timing relationships 6.2.1 Deadtime 6.2.2 Matched propagation delays 6.3 Input logic compatibility 6.4 Undervoltage lockout protection 6.5 Shoot-Through protection 6.6 Enable input 6.7 Fault reporting and programmable fault clear timer 6.8 Over-Current protection 6.9 Truth table: Undervoltage lockout, ITRIP, and ENABLE 6.10 Advanced input filter 6.11 Short-Pulse / Noise rejection 6.12 Integrated bootstrap diodes 6.13 Tolerant to negative VS transients 6.14 PCB layout tips 6.15 Additional documentation 7 Package information 7.1 Package information DSO-24 (DSO-28 4 pin removed) 8 Qualification information 9 Related products Revision history Insert from: "6EDL05I12.pdf" 6EDL05I12.vsdx Page-4