Datasheet NDS8947 (Fairchild) - 5
| Fabricante | Fairchild |
| Descripción | Dual P-Channel Enhancement Mode Field Effect Transistor |
| Páginas / Página | 7 / 5 — Typical Electrical Characteristics. Figure 7. Breakdown Voltage Variation … |
| Formato / tamaño de archivo | PDF / 204 Kb |
| Idioma del documento | Inglés |
Typical Electrical Characteristics. Figure 7. Breakdown Voltage Variation with
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Typical Electrical Characteristics
1.1 2 0 1 0 V = 0V GS 1.08 I = -250µA D 5 1.06 T = 125°C 1 J 25°C 1.04 -55°C 1.02 0.1 1 DSS BV , NORMALIZED 0.98 0.01 0.96 S DRAIN-SOURCE BREAKDOWN VOLTAGE -I , REVERSE DRAIN CURRENT (A) 0.94-50 -25 0 25 50 75 100 125 150 0.001 T , JUNCTION TEMPERATURE (°C) 0 0.4 0.8 1.2 1.6 2 J -V , BODY DIODE FORWARD VOLTAGE (V) SD
Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage Variation Temperature. with Current and Temperature
. 2 0 0 0 1 0 I = -4.0A D V = -5V DS -20V 8 1 0 0 0 C iss -10V 6 5 0 0 C oss 4 3 0 0 CAPACITANCE (pF) f = 1 MHz 2 0 0 2 V = 0V GS C rss GS -V , GATE-SOURCE VOLTAGE (V) 1 0 0 0 0.1 0.2 0.5 1 2 5 1 0 3 0 0 5 1 0 1 5 2 0 2 5 -V , DRAIN TO SOURCE VOLTAGE (V) DS Q , GATE CHARGE (nC) g
Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.
1 2 T = -55°C V = -10V J DS 9 25°C 125°C 6 3 FSg , TRANSCONDUCTANCE (SIEMENS) 0 0 -4 -8 -12 -16 -20 I , DRAIN CURRENT (A) D
Figure 11. Transconductance Variation with Drain Current and Temperature.
NDS8947.SAM
1.1 2 0 1 0 V = 0V GS 1.08 I = -250µA D 5 1.06 T = 125°C 1 J 25°C 1.04 -55°C 1.02 0.1 1 DSS BV , NORMALIZED 0.98 0.01 0.96 S DRAIN-SOURCE BREAKDOWN VOLTAGE -I , REVERSE DRAIN CURRENT (A) 0.94-50 -25 0 25 50 75 100 125 150 0.001 T , JUNCTION TEMPERATURE (°C) 0 0.4 0.8 1.2 1.6 2 J -V , BODY DIODE FORWARD VOLTAGE (V) SD
Figure 7. Breakdown Voltage Variation with Figure 8. Body Diode Forward Voltage Variation Temperature. with Current and Temperature
. 2 0 0 0 1 0 I = -4.0A D V = -5V DS -20V 8 1 0 0 0 C iss -10V 6 5 0 0 C oss 4 3 0 0 CAPACITANCE (pF) f = 1 MHz 2 0 0 2 V = 0V GS C rss GS -V , GATE-SOURCE VOLTAGE (V) 1 0 0 0 0.1 0.2 0.5 1 2 5 1 0 3 0 0 5 1 0 1 5 2 0 2 5 -V , DRAIN TO SOURCE VOLTAGE (V) DS Q , GATE CHARGE (nC) g
Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.
1 2 T = -55°C V = -10V J DS 9 25°C 125°C 6 3 FSg , TRANSCONDUCTANCE (SIEMENS) 0 0 -4 -8 -12 -16 -20 I , DRAIN CURRENT (A) D
Figure 11. Transconductance Variation with Drain Current and Temperature.
NDS8947.SAM