Datasheet SQJ264EP (Vishay) - 5

SQJ264EP
www.vishay.com Vishay Siliconix
N-CHANNEL 1 TYPICAL CHARACTERISTICS
(TA = 25 °C, unless otherwise noted) Axis Title Axis Title 2.0 10000 0.10 10000 d) e liz 1.7 I = 4 A D ) 0.08 a Ω 1000 1000 1.4 V = 10 V GS 0.06 ne ne ne ine ne ine tance (Norm s 1st li 2nd li 1st li 2nd l n-Resistance ( 2nd li 1.1 2nd l 0.04 O T = 150 °C 100 - J 100 n-Resi O (on) - S 0.8 D 0.02 R (on) S D T = 25 °C R J 0.5 10 0.00 10 -50 -25 0 25 50 75 100 125 150 175 0 2 4 6 8 10 T - Junction Temperature (°C) V - Gate-to-Source Voltage (V) J GS
Source Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage
Axis Title Axis Title 76 10000 0.5 10000 ) I = 1 mA D (V 74 0.1 ) ltage o 1000 1000 72 -0.3 nce (V ne ne a I = 5 mA ne ine D ne ine ource V ari 1st li V 2nd li 1st li 2nd l - 2nd li 70 2nd l ) -0.7 100 (th 100 rain-to-S GSV D - 68 -1.1 I = 250 μA D DSV 66 10 -1.5 10 -50 -25 0 25 50 75 100 125 150 175 -50 -25 0 25 50 75 100 125 150 175 T - Junction Temperature (°C) T - Junction Temperature (°C) J J
Threshold Voltage Drain Source Breakdown vs. Junction Temperature
Axis Title Axis Title 100 10000 100 10000 T = 150 °C J I limited DM ) 10 10 ) 100 μs (A 1000 1000 rrent I limited D 1 ms u ne ne rrent (A ine ne ne ine u 1 1 C 10 ms T = 25 °C n J 1st li 2nd li 2nd l 1st li 2nd li 2nd l rai 100 ms, 1 s, ource C Limited by R a 10 s, DC S 100 D DS(on) 100 - - I S 0.1 I D 0.1 BVDSS limited T = 25 °C, C single pulse 0.01 10 0.01 10 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 100 V - Source-to-Drain Voltage (V) V - Drain-to-Source Voltage (V) SD DS
On-Resistance vs. Junction Temperature Safe Operating Area
S19-1108-Rev. A, 30-Dec-2019
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