Datasheet SQJ264EP (Vishay)
| Fabricante | Vishay |
| Descripción | Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs |
| Páginas / Página | 12 / 1 — SQJ264EP. Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs. FEATURES. … |
| Formato / tamaño de archivo | PDF / 349 Kb |
| Idioma del documento | Inglés |
SQJ264EP. Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs. FEATURES. PowerPAK® SO-8L Dual Asymmetric. PRODUCT SUMMARY
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SQJ264EP
www.vishay.com Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs FEATURES PowerPAK® SO-8L Dual Asymmetric
• TrenchFET® power MOSFET • AEC-Q101 qualified D1 • 100 % Rg and UIS tested • Optimized for synchronous buck applications D2 • Material categorization: 1 6.15 mm 6.1 for definitions of compliance please see 5 2 S1 m www.vishay.com/doc?99912 m G1 m 3 m 13 S2 4 1 5.13 mm 1 5 G D 1 D 2 2 Top View Bottom View
PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2
G 1 G 2 VDS (V) 60 60 RDS(on) (Ω) at VGS = 10 V 0.0200 0.0086 ID (A) 20 54 Configuration Dual S S Package PowerPAK SO-8L asymmetric 1 2 N-Channel 1 MOSFET N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Drain-source voltage VDS 60 60 V Gate-source voltage VGS ± 20 TC = 25 °C 20 a 54 Continuous drain current ID TC = 125 °C 15 31 Continuous source current (diode conduction) IS 20 a 44 A Pulsed drain current b IDM 65 90 Single pulse avalanche current IAS 19 31 L = 0.1 mH Single pulse avalanche energy EAS 18 48 mJ TC = 25 °C 27 48 Maximum power dissipation b PD W TC = 125 °C 9 16 Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Junction-to-ambient PCB mount c RthJA 85 85 °C/W Junction-to-case (drain) RthJC 5.5 3.1
Notes
a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-1108-Rev. A, 30-Dec-2019
1
Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
Automotive Dual N-Channel 60 V (D-S) 175 °C MOSFETs FEATURES PowerPAK® SO-8L Dual Asymmetric
• TrenchFET® power MOSFET • AEC-Q101 qualified D1 • 100 % Rg and UIS tested • Optimized for synchronous buck applications D2 • Material categorization: 1 6.15 mm 6.1 for definitions of compliance please see 5 2 S1 m www.vishay.com/doc?99912 m G1 m 3 m 13 S2 4 1 5.13 mm 1 5 G D 1 D 2 2 Top View Bottom View
PRODUCT SUMMARY N-CHANNEL 1 N-CHANNEL 2
G 1 G 2 VDS (V) 60 60 RDS(on) (Ω) at VGS = 10 V 0.0200 0.0086 ID (A) 20 54 Configuration Dual S S Package PowerPAK SO-8L asymmetric 1 2 N-Channel 1 MOSFET N-Channel 2 MOSFET
ABSOLUTE MAXIMUM RATINGS
(TC = 25 °C, unless otherwise noted)
PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Drain-source voltage VDS 60 60 V Gate-source voltage VGS ± 20 TC = 25 °C 20 a 54 Continuous drain current ID TC = 125 °C 15 31 Continuous source current (diode conduction) IS 20 a 44 A Pulsed drain current b IDM 65 90 Single pulse avalanche current IAS 19 31 L = 0.1 mH Single pulse avalanche energy EAS 18 48 mJ TC = 25 °C 27 48 Maximum power dissipation b PD W TC = 125 °C 9 16 Operating junction and storage temperature range TJ, Tstg -55 to +175 °C Soldering recommendations (peak temperature) d, e 260
THERMAL RESISTANCE RATINGS PARAMETER SYMBOL N-CHANNEL 1 N-CHANNEL 2 UNIT
Junction-to-ambient PCB mount c RthJA 85 85 °C/W Junction-to-case (drain) RthJC 5.5 3.1
Notes
a. Package limited b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 % c. When mounted on 1" square PCB (FR4 material) d. See solder profile (www.vishay.com/doc?73257). The PowerPAK SO-8L is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S19-1108-Rev. A, 30-Dec-2019
1
Document Number: 77239 For technical questions, contact: automostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000