Datasheet SI9424DY (Fairchild) - 2
| Fabricante | Fairchild |
| Descripción | Single P-Channel 2.5V Specified PowerTrench MOSFET |
| Páginas / Página | 5 / 2 — S i9 424. Electrical Characteristics. Symbol Parameter Test Conditions … |
| Formato / tamaño de archivo | PDF / 80 Kb |
| Idioma del documento | Inglés |
S i9 424. Electrical Characteristics. Symbol Parameter Test Conditions Min Typ Max Units. Off Characteristics
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S i9 424 Electrical Characteristics
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units DY Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V ∆ BV DSS Breakdown Voltage Temperature ID = -250 µA, Referenced to 25°C -24 mV/°C ∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 10 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -10 V, VDS = 0 V -100 nA
On Characteristics
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.8 -1.5 V ∆ V GS(th) Gate Threshold Voltage ID = -250 µA, Referenced to 25°C 5 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain-Source VGS = -4.5 V, ID = -8 A 0.019 0.024 Ω On-Resistance VGS = -4.5 V, ID = -8 A ,TJ=125°C 0.026 0.039 VGS = -2.5 V, ID = -7 A 0.027 0.032 ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5.0 V -50 A gFS Forward Transconductance VDS = -5 V, ID = -8 A 28 S
Dynamic Characteristics
Ciss Input Capacitance VDS = -10 V, VGS = 0 V, 2260 pF C f = 1.0 MHz oss Output Capacitance 500 pF Crss Reverse Transfer Capacitance 205 pF
Switching Characteristics
(Note 2) td(on) Turn-On Delay Time VDD = -10 V, ID = -1 A, 8 16 ns t VGS = -4.5 V, RGEN = 6 Ω r Turn-On Rise Time 15 27 ns td(off) Turn-Off Delay Time 98 135 ns tf Turn-Off Fall Time 35 55 ns Qg Total Gate Charge VDS = -10 V, ID = -8 A, 23 33 nC Q VGS = -5 V, gs Gate-Source Charge 5.5 nC Qgd Gate-Drain Charge 4 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -2.1 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) -0.75 -1.2 V
Notes: 1:
Rθ is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the JA drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θJA a) 50° C/W when b) 105° C/W when c) 125° C/W when mounted on a 0.5 in2 mounted on a 0.02 in2 mounted on a 0.003 in2 pad of 2 oz. copper. pad of 2 oz. copper. pad of 2 oz. copper. Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Si9424DY Rev.A
T = 25°C unless otherwise noted A
Symbol Parameter Test Conditions Min Typ Max Units DY Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA -20 V ∆ BV DSS Breakdown Voltage Temperature ID = -250 µA, Referenced to 25°C -24 mV/°C ∆T Coefficient J IDSS Zero Gate Voltage Drain Current VDS = -16 V, VGS = 0 V -1 µA IGSSF Gate-Body Leakage Current, Forward VGS = 10 V, VDS = 0 V 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -10 V, VDS = 0 V -100 nA
On Characteristics
(Note 2) VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA -0.4 -0.8 -1.5 V ∆ V GS(th) Gate Threshold Voltage ID = -250 µA, Referenced to 25°C 5 mV/°C ∆T Temperature Coefficient J RDS(on) Static Drain-Source VGS = -4.5 V, ID = -8 A 0.019 0.024 Ω On-Resistance VGS = -4.5 V, ID = -8 A ,TJ=125°C 0.026 0.039 VGS = -2.5 V, ID = -7 A 0.027 0.032 ID(on) On-State Drain Current VGS = -4.5 V, VDS = -5.0 V -50 A gFS Forward Transconductance VDS = -5 V, ID = -8 A 28 S
Dynamic Characteristics
Ciss Input Capacitance VDS = -10 V, VGS = 0 V, 2260 pF C f = 1.0 MHz oss Output Capacitance 500 pF Crss Reverse Transfer Capacitance 205 pF
Switching Characteristics
(Note 2) td(on) Turn-On Delay Time VDD = -10 V, ID = -1 A, 8 16 ns t VGS = -4.5 V, RGEN = 6 Ω r Turn-On Rise Time 15 27 ns td(off) Turn-Off Delay Time 98 135 ns tf Turn-Off Fall Time 35 55 ns Qg Total Gate Charge VDS = -10 V, ID = -8 A, 23 33 nC Q VGS = -5 V, gs Gate-Source Charge 5.5 nC Qgd Gate-Drain Charge 4 nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current -2.1 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -2.1 A (Note 2) -0.75 -1.2 V
Notes: 1:
Rθ is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the JA drain pins. Rθ is guaranteed by design while R is determined by the user's board design. JC θJA a) 50° C/W when b) 105° C/W when c) 125° C/W when mounted on a 0.5 in2 mounted on a 0.02 in2 mounted on a 0.003 in2 pad of 2 oz. copper. pad of 2 oz. copper. pad of 2 oz. copper. Scale 1 : 1 on letter size paper
2:
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0% Si9424DY Rev.A