Datasheet SSM3H137TU (Toshiba) - 2

SSM3H137TU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS 34 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 2 A Drain current (pulsed) (Note 1), (Note 2) IDP 6 Power dissipation (Note 3) PD 800 mW Power dissipation (t = 1 s) (Note 3) 1000 Channel temperature Tch 150 Single-pulse avalanche energy (Note 4) EAS 3.5 mJ Avalanche current IAR 2.0 A Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) ≤ 10 µs, duty ≤ 1% Note 3: Device mounted on an FR4 board. (25.4 mm × 25.4 mm × 1.6 mm ,Cu pad: 645 mm2) Note 4: VDD = 25 V, Starting Tch = 25 , L = 0.5 mH Note: The MOSFETs in this device are sensitive to electrostatic discharge. When handling this device, the worktables, operators, soldering irons and other objects should be protected against anti-static discharge. Note: The channel-to-ambient thermal resistance, Rth(ch-a), and the drain power dissipation, PD, vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. ©2016 Toshiba Corporation 2 2016-03-25 Rev.1.0