Datasheet SSM3H137TU (Toshiba) - 3

SSM3H137TU 5. Electrical Characteristics 5.1. Static Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Test Condition Min Typ. Max Unit Drain-source breakdown voltage V(BR)DSS ID = 1 mA, VGS = 0 V 34  37 V Drain cut-off current IDSS VDS = 30.4 V, VGS = 0V   10 µA Gate leakage current IGSS VGS = ±16 V, VDS = 0V   ±10 Gate threshold voltage (Note 1) Vth VDS = 10 V, ID = 1 mA 0.7  1.7 V Drain-source on-resistance (Note 2) RDS(ON) VGS = 4.0 V, ID = 0.5 A  230 295 mΩ VGS = 4.5 V, ID = 1.0 A  220 280 VGS = 10 V, ID = 1.0 A  200 240 Forward transfer admittance (Note 2) |Yfs| VDS = 10 V, ID = 0.5 A  2.2  S Note 1: Let Vth be the voltage applied between gate and source that causes the drain current (ID) to below (1 mA for this device). Then, for normal switching operation, VGS(ON) must be higher than Vth, and VGS(OFF) must be lower than Vth. This relationship can be expressed as: VGS(OFF) < Vth < VGS(ON). Take this into consideration when using the device. Note 2: Pulse measurement. 5.2. Dynamic Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Test Condition Min Typ. Max Unit Input capacitance Ciss VDS = 10 V, VGS = 0 V,  119  pF Reverse transfer capacitance C f = 1 MHz rss  8  Output capacitance Coss  40  Switching time (turn-on time) ton VDD = 20 V, ID = 0.5 A,  320  ns VGS = 0 to 4.5 V, RG = 10 Ω Duty ≤ 1%, VIN: tr, tf < 5 ns, Switching time (turn-off time) toff Common source,  800  See Chapter 5.3. 5.3. Switching Time Test Circuit Fig. 5.3.1 Switching Time Test Circuit Fig. 5.3.2 Input Waveform/Output Waveform 5.4. Gate Charge Characteristics (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Test Condition Min Typ. Max Unit Total gate charge (gate-source plus gate-drain) Qg VDD = 20 V, ID = 1.0 A,  3.0  nC Gate-source charge 1 Q VGS = 10 V gs1  0.8  Gate-drain charge Qgd  0.4  ©2016 Toshiba Corporation 3 2016-03-25 Rev.1.0