Datasheet 2SJ305 (Toshiba) - 2

2SJ305
Electrical Characteristics (Ta
=
25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±10 V, VDS = 0 ⎯ ⎯ ±0.1 μA Drain-source breakdown voltage V (BR) DSS ID = −1 mA, VGS = 0 −30 ⎯ ⎯ V Drain cut-off current IDSS VDS = −30 V, VGS = 0 ⎯ ⎯ −10 μA Gate threshould voltage Vth VDS = −3 V, ID = −0.1 mA −0.5 ⎯ −1.5 V Forward transfer admittance ⎪Yfs⎪ VDS = −3 V, ID = −50 mA 100 ⎯ ⎯ mS Drain-source ON resistance RDS (ON) ID = −50 mA, VGS = −2.5 V ⎯ 2.4 4 Ω Input capacitance Ciss VDS = −3 V, VGS = 0, f = 1 MHz ⎯ 92 ⎯ pF Reverse transfer capacitance Crss VDS = −3 V, VGS = 0, f = 1 MHz ⎯ 36 ⎯ pF Output capacitance Coss VDS = −3 V, VGS = 0, f = 1 MHz ⎯ 80 ⎯ pF V Turn-on time t DD = −3 V, ID = −10 mA on ⎯ 0.06 ⎯ VGS = 0 to −2.5 V Switching time μs V Turn-off time t DD = −3 V, ID = −10 mA off ⎯ 0.15 ⎯ VGS = 0 to −2.5 V
Switching Time Test Circuit
2 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Absolute Maximum Ratings (Ta  25°C) Marking Equivalent Circuit Electrical Characteristics (Ta  25°C) Switching Time Test Circuit RESTRICTIONS ON PRODUCT USE