Datasheet 2SJ305 (Toshiba)

2SJ305 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
2SJ305
High Speed Switching Applications Unit: mm Analog Applications • High input impedance • Low gate threshold voltage.: Vth = −0.5 to −1.5 V • Excellent switching times.: ton = 0.06 μs (typ.) toff = 0.15 μs (typ.) • Low drain-source ON resistance: RDS (ON) = 2.4 Ω (typ.) • Small package. • Complementary to 2SK2009
Absolute Maximum Ratings (Ta
=
25°C)
Characteristics Symbol Rating Unit Drain-source voltage V DS −30 V Gate-source voltage VGSS ±20 V JEDEC TO-236MOD DC drain current ID −200 mA JEITA SC-59 Drain power dissipation PD 200 mW TOSHIBA 2-3F1F Channel temperature Tch 150 °C Weight: 0.012 g (typ.) Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note: This transistor is electrostatic sensitive device. Please handle with caution.
Marking Equivalent Circuit
Start of commercial production 1992-04 1 2014-03-01 Document Outline TOSHIBA Field Effect Transistor Silicon P Channel MOS Type Absolute Maximum Ratings (Ta  25°C) Marking Equivalent Circuit Electrical Characteristics (Ta  25°C) Switching Time Test Circuit RESTRICTIONS ON PRODUCT USE