Datasheet J175, J176, MMBFJ175, MMBFJ176, MMBFJ177 (ON Semiconductor) - 3

J 175 / J176 / MMBF Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Conditions Min. Max. Unit Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = 1.0 μA, VDS = 0 30 V IGSS Gate Reverse Current VGS = 20 V, VDS = 0 1.0 nA
J175 / MMBFJ1 J175 /
3.0 6.0
MMBFJ175
VGS(off) Gate-Source Cut-Off Voltage VDS = -15 V, ID = -10 nA
J176 /
V 1.0 4.0
MMBFJ176 MMBFJ177
0.8 2.5
On Characteristics 76 / MMBFJ177 — J175 /
-7.0 -60.0
MMBFJ175
IDSS Zero-Gate Voltage Drain Current(4) VDS = -15 V, IGS = 0
J176 /
mA -2.0 -25.0
MMBFJ176 MMBFJ177
-1.5 -20.0
J175 /
125
MMBFJ175
rDS(on) Drain-Source On Resistance VDS ≤ 0.1 V, VGS = 0
J176 /
Ω
P-Channe
250
MMBFJ176 MMBFJ177
300
Note:
4. Pulse test: pulse width ≤ 300 μs, duty cycle ≤ 2.0%.
l Switch
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