Datasheet J175, J176, MMBFJ175, MMBFJ176, MMBFJ177 (ON Semiconductor) - 5
| Fabricante | ON Semiconductor |
| Descripción | P-Channel Switch |
| Páginas / Página | 8 / 5 — J 175 / J176 / MMBF. Typical Performance Characteristics. ) s o. f = 0.1 … |
| Revisión | 2 |
| Formato / tamaño de archivo | PDF / 344 Kb |
| Idioma del documento | Inglés |
J 175 / J176 / MMBF. Typical Performance Characteristics. ) s o. f = 0.1 - 1.0 MHz. V = 2.5V. GS(off). (pF). 25°C. NCE. J175 / MMBFJ1
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J 175 / J176 / MMBF Typical Performance Characteristics
(Continued)
) s o
100 10
f = 0.1 - 1.0 MHz V = 2.5V GS(off) (pF)
5
25°C NCE J175 / MMBFJ1 NCE (mmh V = 6.0V A A GS(off) T - 55°C CI A C (V = -15V) is DS
1
25°C P
10
125°C NDUCT CA O
0.5
- C )
5
C (V = -15V) rs DS rs V = -15V DG C RANS ( f = 1.0 kHz is T C -
0.1
fs _
0.1
_
1
_
10
_
100 1
76 / MMBFJ177 — g I - DRAIN CURRENT (mA)
0 4 8 12 16 20
D V GS - GATE-SOURCE VOLTAGE (V) Figure 9. Transconductance vs. Drain Current Figure 10. Capacitance vs. Voltage )
100
) z (
Ω
H
1000 √ 50
V = -100 mV DS / NCE V A
500
V = 2.5V GS(off) I = - 0.2 mA T V = 0 GS (n D IS V = 4.5V E GS(off) P-Channe G V = 8.0V A GS(off) T RES L
10
I = 5.0 mA D O N"
100
V O E
5
"
50
IS IN O V = - 15V DG N BW = 6.0 Hz @ f = 10 Hz, 100 Hz l Switch - n - DRA = 0.2f @ f
≥
1.0 kHz e DSr
1 10 0.01 0.1 1 10 100 -50 0 50 100 150
f - FREQUENCY (kHz) T o A - AMBIENT TEMPERATURE ( C) Figure 11. Noise Voltage vs. Frequency Figure 12. Channel Resistance vs. Temperature
350
) W (m
300
ON TO-92
250
TI A P
200
SSI
150
SOT-23
100
POWER DI
50
- D P
0 0 25 50 75 100 125 150
o TEMPERATURE ( C) Figure 13. Power Dissipation vs. Ambient Temperature
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(Continued)
) s o
100 10
f = 0.1 - 1.0 MHz V = 2.5V GS(off) (pF)
5
25°C NCE J175 / MMBFJ1 NCE (mmh V = 6.0V A A GS(off) T - 55°C CI A C (V = -15V) is DS
1
25°C P
10
125°C NDUCT CA O
0.5
- C )
5
C (V = -15V) rs DS rs V = -15V DG C RANS ( f = 1.0 kHz is T C -
0.1
fs _
0.1
_
1
_
10
_
100 1
76 / MMBFJ177 — g I - DRAIN CURRENT (mA)
0 4 8 12 16 20
D V GS - GATE-SOURCE VOLTAGE (V) Figure 9. Transconductance vs. Drain Current Figure 10. Capacitance vs. Voltage )
100
) z (
Ω
H
1000 √ 50
V = -100 mV DS / NCE V A
500
V = 2.5V GS(off) I = - 0.2 mA T V = 0 GS (n D IS V = 4.5V E GS(off) P-Channe G V = 8.0V A GS(off) T RES L
10
I = 5.0 mA D O N"
100
V O E
5
"
50
IS IN O V = - 15V DG N BW = 6.0 Hz @ f = 10 Hz, 100 Hz l Switch - n - DRA = 0.2f @ f
≥
1.0 kHz e DSr
1 10 0.01 0.1 1 10 100 -50 0 50 100 150
f - FREQUENCY (kHz) T o A - AMBIENT TEMPERATURE ( C) Figure 11. Noise Voltage vs. Frequency Figure 12. Channel Resistance vs. Temperature
350
) W (m
300
ON TO-92
250
TI A P
200
SSI
150
SOT-23
100
POWER DI
50
- D P
0 0 25 50 75 100 125 150
o TEMPERATURE ( C) Figure 13. Power Dissipation vs. Ambient Temperature
www.onsemi.com 5