Datasheet EPC2207 (Efficient Power Conversion) - 2

eGaN® FET DATASHEET
EPC2207
Dynamic Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
CISS Input Capacitance# 454 600 CRSS Reverse Transfer Capacitance VDS = 100 V, VGS = 0 V 0.7 COSS Output Capacitance# 130 195 pF COSS(ER) Effective Output Capacitance, Energy Related (Note 2) 186 VDS = 0 to 100 V, VGS = 0 V COSS(TR) Effective Output Capacitance, Time Related (Note 3) 234 RG Gate Resistance 0.3 Ω QG Total Gate Charge# VDS = 100 V, VGS = 5 V, ID = 14 A 4.5 5.9 QGS Gate-to-Source Charge 1.3 QGD Gate-to-Drain Charge VDS = 100 V, ID = 14 A 0.7 nC QG(TH) Gate Charge at Threshold 0.8 QOSS Output Charge# VDS = 100 V, VGS = 0 V 23 35 QRR Source-Drain Recovery Charge 0 # Defined by design. Not subject to production test. Note 2: COSS(ER) is a fixed capacitance that gives the same stored energy as COSS while VDS is rising from 0 to 50% BVDSS. Note 3: COSS(TR) is a fixed capacitance that gives the same charging time as COSS while VDS is rising from 0 to 50% BVDSS.
Figure 1: Typical Output Characteristics at 25°C Figure 2: Transfer Characteristics
50 50 25˚C 125˚C 40 40 VDS = 3 V DS = 6 V 30 30
– Drain Current (A)
20
– Drain Current (A)
20
I D
VGS = 5 V
I D
VGS = 4 V 10 VGS = 3 V 10 VGS = 2 V 0 0 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VDS V – Drain-to-Source Voltage (V) GS – Gate-to-Source Voltage (V) Figure 3: RDS(on) vs. VGS for Various Drain Currents Figure 4: RDS(on) vs. VGS for Various Temperatures
60 60
)
ID = 7 A
Ω
50 I 50 D = 14 A 25˚C ID = 21 A 125˚C I
ance (m
40 D = 28 A 40 VIDS D = 3 V = 14 A
ce Resist
30
ur So
30
to-
20 20
– Drain-to-Source Resistance (mΩ) – Drain-
10
R DS(on) R DS(on)
10 0 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0
VGS – Gate-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V)
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