Datasheet EPC2207 (Efficient Power Conversion)
| Fabricante | Efficient Power Conversion |
| Descripción | Enhancement-Mode Power Transistor |
| Páginas / Página | 6 / 1 — eGaN® FET DATASHEET. EPC2207 – Enhancement Mode Power Transistor. … |
| Formato / tamaño de archivo | PDF / 1.2 Mb |
| Idioma del documento | Inglés |
eGaN® FET DATASHEET. EPC2207 – Enhancement Mode Power Transistor. EFFICIENT POWER CONVERSION. HAL. Maximum Ratings. EPC2207
Línea de modelo para esta hoja de datos
Versión de texto del documento
eGaN® FET DATASHEET
EPC2207
EPC2207 – Enhancement Mode Power Transistor
VDS , 200 V
D
R
G EFFICIENT POWER CONVERSION
DS(on) , 22 mΩ ID , 14 A
HAL S
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings EPC2207 eGaN® FETs are supplied only in PARAMETER VALUE UNIT passivated die form with solder bars. Die Size: 2.9 mm x 0.9 mm
VDS Drain-to-Source Voltage (Continuous) 200 V Continuous (T I A = 25°C) 14
Applications
D A Pulsed (25°C, TPULSE = 300 µs) 54 • DC-DC Converters • Wireless Power Gate-to-Source Voltage 6 • Solar Micro Inverters V • BLDC Motor Drives GS V Gate-to-Source Voltage -4 • Sync Rectification for • Robotics TJ Operating Temperature -40 to 150 AC/DC and DC-DC • Class-D Audio °C T • Multi-level AC/DC STG Storage Temperature -40 to 150 Power Supplies
Thermal Characteristics Benefits PARAMETER TYP UNIT
• Ultra High Efficiency R • No Reverse Recovery θJC Thermal Resistance, Junction-to-Case 1.4 R °C/W • Ultra Low Q θJB Thermal Resistance, Junction-to-Board 5.1 G R • Small Footprint θJA Thermal Resistance, Junction-to-Ambient (Note 1) 72 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.2 mA 200 V IDSS Drain-Source Leakage VGS = 0 V, VDS = 160 V 0.05 0.16 Gate-to-Source Forward Leakage VGS = 5 V 0.01 1.3 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.16 2.9 Gate-to-Source Reverse Leakage VGS = -4 V 0.05 0.16 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 2 mA 0.8 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 14 A 15 22 mΩ VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 1.7 V # Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1
EPC2207
EPC2207 – Enhancement Mode Power Transistor
VDS , 200 V
D
R
G EFFICIENT POWER CONVERSION
DS(on) , 22 mΩ ID , 14 A
HAL S
Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings EPC2207 eGaN® FETs are supplied only in PARAMETER VALUE UNIT passivated die form with solder bars. Die Size: 2.9 mm x 0.9 mm
VDS Drain-to-Source Voltage (Continuous) 200 V Continuous (T I A = 25°C) 14
Applications
D A Pulsed (25°C, TPULSE = 300 µs) 54 • DC-DC Converters • Wireless Power Gate-to-Source Voltage 6 • Solar Micro Inverters V • BLDC Motor Drives GS V Gate-to-Source Voltage -4 • Sync Rectification for • Robotics TJ Operating Temperature -40 to 150 AC/DC and DC-DC • Class-D Audio °C T • Multi-level AC/DC STG Storage Temperature -40 to 150 Power Supplies
Thermal Characteristics Benefits PARAMETER TYP UNIT
• Ultra High Efficiency R • No Reverse Recovery θJC Thermal Resistance, Junction-to-Case 1.4 R °C/W • Ultra Low Q θJB Thermal Resistance, Junction-to-Board 5.1 G R • Small Footprint θJA Thermal Resistance, Junction-to-Ambient (Note 1) 72 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. See https://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
Static Characteristics (TJ = 25°C unless otherwise stated) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
BVDSS Drain-to-Source Voltage VGS = 0 V, ID = 0.2 mA 200 V IDSS Drain-Source Leakage VGS = 0 V, VDS = 160 V 0.05 0.16 Gate-to-Source Forward Leakage VGS = 5 V 0.01 1.3 mA IGSS Gate-to-Source Forward Leakage# VGS = 5 V, TJ = 125°C 0.16 2.9 Gate-to-Source Reverse Leakage VGS = -4 V 0.05 0.16 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = 2 mA 0.8 1.1 2.5 V RDS(on) Drain-Source On Resistance VGS = 5 V, ID = 14 A 15 22 mΩ VSD Source-Drain Forward Voltage IS = 0.5 A, VGS = 0 V 1.7 V # Defined by design. Not subject to production test. EPC – POWER CONVERSION TECHNOLOGY LEADER | EPC-CO.COM | ©2020 | | 1