Datasheet TPD4162F (Toshiba) - 8

FabricanteToshiba
DescripciónHigh Voltage Monolithic Silicon Power IC
Páginas / Página15 / 8 — TPD4162F. 8. Absolute Maximum Ratings. Table 8.1 Absolute Maximum …
Formato / tamaño de archivoPDF / 763 Kb
Idioma del documentoInglés

TPD4162F. 8. Absolute Maximum Ratings. Table 8.1 Absolute Maximum Ratings. Characteristics. Symbol. Rating. Unit

TPD4162F 8 Absolute Maximum Ratings Table 8.1 Absolute Maximum Ratings Characteristics Symbol Rating Unit

Línea de modelo para esta hoja de datos

Versión de texto del documento

TPD4162F 8. Absolute Maximum Ratings Table 8.1 Absolute Maximum Ratings
(Ta = 25°C unless otherwise specified)
Characteristics Symbol Rating Unit
VBB 600 V Power supply voltage VCC 20 V Output current (DC) Iout 0.7 A Output current (pulse) Ioutp 1.2 A Input voltage (except VS) VIN -0.5 to VREG + 0.5 V Input voltage (only VS) VVS 8.2 V VREG current IREG 50 mA FG voltage VFG 6 V FG current IFG 20 mA Power dissipation (Tc = 25°C) PC 20 W Operating junction temperature Tjopr -40 to 135 °C Junction temperature Tj 150 °C Storage temperature Tstg -55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods“) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
8.1. Safe Operating Area
0.7 ) (A rent ur ng c indi w eak P 0 0 450 Power supply voltage VBB (V)
Figure8.1 SOA at Tj = 135 °C
© 2 020 8 2020-02-20 Toshiba Electronic Devices & Storage Corporation