Datasheet TPD4162F (Toshiba) - 9
Fabricante | Toshiba |
Descripción | High Voltage Monolithic Silicon Power IC |
Páginas / Página | 15 / 9 — TPD4162F. 9. Operating Ranges. Table 9.1 Operating Ranges(Ta=25. … |
Formato / tamaño de archivo | PDF / 763 Kb |
Idioma del documento | Inglés |
TPD4162F. 9. Operating Ranges. Table 9.1 Operating Ranges(Ta=25. Characteristics. Symbol. Test Condition. Min. Typ. Max. Unit
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TPD4162F 9. Operating Ranges Table 9.1 Operating Ranges(Ta=25
℃
) Characteristics Symbol Test Condition Min Typ. Max Unit
VBB 50 280 450 Operating power supply voltage V VCC 13.5 15 17.5
10. Electrical Characteristics Table 10.1 Electrical Characteristics(Ta=25
℃
) Characteristics Symbol Test Condition Min Typ. Max Unit
IBB VBB = 450 V, Duty cycle = 0 % 0.5 mA ICC VCC = 15 V, Duty cycle = 0 % 0.9 1.5 Current dissipation IBS (ON) VBS = 15 V, high side ON 85 150 µA IBS (OFF) VBS = 15 V, high side OFF 75 130 Hall amp input sensitivity VHSENS(HA) ― 50 ― ― mVp-p Hall amp input current IHB(HA) ― -2 0 2 µA Hall amp common input voltage CMVIN(HA) ― 0.7 VREG-1.3 V Hall amp hysteresis width ∆VIN(HA) ― 8 30 62 Hall amp input voltage L→H VLH(HA) ― 4 15 31 mV Hall amp input voltage H→L VHL(HA) ― -31 -15 -4 Output saturation voltage VCEsat VCC = 15 V, Ioutp = 0.5 A 2.0 3.0 V FRD forward voltage VF IF = 0.5 A 1.5 3.0 V PWMMIN ― 0 PWM ON-duty cycle % PWMMAX ― 100 PWM ON-duty cycle, 0 % VVS0 % PWM = 0 % 1.7 2.1 2.5 V PWM ON-duty cycle, 100 % VVS100 % PWM = 100 % 4.9 5.4 6.1 V PWM ON-duty voltage range VVSW VVS100 % − VVS0 % 2.8 3.3 3.8 V Output all-OFF voltage VVSOFF Output all OFF 1.1 1.3 1.5 V Regulator voltage VREG VCC = 15 V, IREG = 30 mA 4.5 5.0 5.5 V Speed control voltage range VS ― 0 6.5 V FG output saturation voltage VFGsat VCC = 15 V, IFG = 5 mA 0.5 V Current limit voltage VR ― 0.46 0.5 0.54 V Current limit delay time DtR 3 4.5 µs Over-current protection voltage VCS 0.64 0.7 0.76 V Over-current protection delay time tCS C 2.2 3.5 µs 4=470 pF , R2=2 MΩ Over-current protection recovery time tcsr 1.0 2.0 ms Thermal shutdown temperature TSD 135 185 °C Thermal shutdown hysteresis ∆TSD ― 50 °C VCC under-voltage protection VCCUVD ― 10 11 12 V VCC under-voltage protection V recovery CCUVR ― 10.5 11.5 12.5 V © 2 020 9 2020-02-20 Toshiba Electronic Devices & Storage Corporation