Datasheet NST489AMT1G, NSVT489AMT1G (ON Semiconductor) - 2

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NST489AMT1G, NSVT489AMT1G ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage (IC = 10 mA, IB = 0) V(BR)CEO 30 − − V Collector− Base Breakdown Voltage (IC = 0.1 mA, IE = 0) V(BR)CBO 50 − − V Emitter − Base Breakdown Voltage (IE = 0.1 mA, IC = 0) V(BR)EBO 5.0 − − V Collector Cutoff Current (VCB = 30 V, IE = 0) ICBO − − 0.1 mA Collector−Emitter Cutoff Current (VCES = 30 V) ICES − − 0.1 mA Emitter Cutoff Current (VEB = 4.0 V) IEBO − − 0.1 mA
ON CHARACTERISTICS
DC Current Gain (Note 4) (IC = 1.0 mA, VCE = 5.0 V) hFE 300 − − (IC = 0.5 A, VCE = 5.0 V) 300 500 900 (IC = 1.0 A, VCE = 5.0 V) 200 − − Collector − Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 100 mA) VCE(sat) − 0.10 0.200 V (IC = 0.5 A, IB = 50 mA) − 0.06 0.125 (IC = 0.1 A, IB = 1.0 mA) − 0.05 0.075 Base − Emitter Saturation Voltage (Note 4) (IC = 1.0 A, IB = 0.1 A) VBE(sat) − − 1.1 V Base − Emitter Turn−on Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V) VBE(on) − − 1.1 V Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz fT 200 300 − MHz Output Capacitance (f = 1.0 MHz) Cobo − − 15 pF 4. Pulsed Condition: Pulse Width ≤ 300 msec, Duty Cycle ≤ 2%. 1.0 1.0 0.9 0.9 IC = 2 A 0.8 0.8 0.7 0.7 IC = 1 A 0.6 0.6 (V) (V) 0.5 0.5 CE(sat) CE(sat) I V 0.4 V 0.4 c/Ib = 100 0.3 0.3 Ic/Ib = 10 0.2 IC = 500 mA 0.2 0.1 0.1 IC = 100 mA 0 0 0.001 0.01 0.1 0.2 0.001 0.01 0.1 1 2 Ib (A) Ic (A)
Figure 1. VCE (sat) versus Ib Figure 2. VCE (sat) versus Ic
800 1.2 VCE = 5 V VCE = 5 V 700 +125°C 1.0 600 +25°C −55°C 0.8 500 (V) +25°C FE 400 on) 0.6 h BE( −55°C V 300 +125°C 0.4 200 0.2 100 0 0 0.001 0.01 0.1 1 2 0.001 0.01 0.1 1 2 I I c (A) c (A)
Figure 3. hFE versus Ic Figure 4. VBE(on) versus Ic www.onsemi.com 2