Datasheet NST489AMT1G, NSVT489AMT1G (ON Semiconductor)
| Fabricante | ON Semiconductor |
| Descripción | High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in Portable Applications |
| Páginas / Página | 4 / 1 — www.onsemi.com. 30 VOLTS, 3.0 AMPS. NPN TRANSISTOR. Features. TSOP−6. … |
| Revisión | 9 |
| Formato / tamaño de archivo | PDF / 62 Kb |
| Idioma del documento | Inglés |
www.onsemi.com. 30 VOLTS, 3.0 AMPS. NPN TRANSISTOR. Features. TSOP−6. CASE 318G. STYLE 6. MAXIMUM RATINGS. Rating. Symbol. Max. Unit
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link to page 1 link to page 1 link to page 1 link to page 1 link to page 1 link to page 1 link to page 1 link to page 1 link to page 3 NST489AMT1G, NSVT489AMT1G High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor for Load Management in
www.onsemi.com
Portable Applications
30 VOLTS, 3.0 AMPS NPN TRANSISTOR Features
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
TSOP−6
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
CASE 318G STYLE 6
Compliant COLLECTOR
MAXIMUM RATINGS
(T 1, 2, 5, 6 A = 25°C)
Rating Symbol Max Unit
3 Collector-Emitter Voltage VCEO 30 V BASE Collector-Base Voltage VCBO 50 V Emitter-Base Voltage V 4 EBO 5.0 V EMITTER Collector Current − Continuous IC 2.0 A Collector Current − Peak ICM 3.0 A
DEVICE MARKING THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
N2 M G Total Device Dissipation PD (Note 1) G TA = 25°C 535 mW Derate above 25°C 4.3 mW/°C Thermal Resistance, RqJA (Note 1) °C/W Junction−to−Ambient 234 N2 = Specific Device Code M = Date Code* Total Device Dissipation PD (Note 2) G = Pb−Free Package TA = 25°C 1.180 W (Note: Microdot may be in either location) Derate above 25°C 9.4 mW/°C *Date Code orientation may vary depending upon Thermal Resistance, RqJA (Note 2) °C/W manufacturing location. Junction−to−Ambient 106 Thermal Resistance, RqJL (Note 1) 110 °C/W
ORDERING INFORMATION ORDERING INFORMA
Junction−to−Lead #1 RqJL (Note 2) 50 °C/W Total Device Dissipation P
Device Package Shipping
† Dsingle W (Single Pulse < 10 s) (Notes 2 and 3) 1.75 NST489AMT1G TSOP−6 3,000 / Junction and Storage TJ, Tstg −55 to +150 °C (Pb−Free) Tape & Reel Temperature Range NSVT489AMT1G TSOP−6 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (Pb−Free) Tape & Reel assumed, damage may occur and reliability may be affected. †For information on tape and reel specifications, 1. FR− 4 with 1 oz and 3.9 mm2 of copper area. including part orientation and tape sizes, please 2. FR− 4 with 1 oz and 645 mm2 of copper area. refer to our Tape and Reel Packaging Specifications 3. Refer to Figure 8. Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
January, 2018 − Rev. 9 NST489AMT1/D
www.onsemi.com
Portable Applications
30 VOLTS, 3.0 AMPS NPN TRANSISTOR Features
• NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
TSOP−6
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
CASE 318G STYLE 6
Compliant COLLECTOR
MAXIMUM RATINGS
(T 1, 2, 5, 6 A = 25°C)
Rating Symbol Max Unit
3 Collector-Emitter Voltage VCEO 30 V BASE Collector-Base Voltage VCBO 50 V Emitter-Base Voltage V 4 EBO 5.0 V EMITTER Collector Current − Continuous IC 2.0 A Collector Current − Peak ICM 3.0 A
DEVICE MARKING THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
N2 M G Total Device Dissipation PD (Note 1) G TA = 25°C 535 mW Derate above 25°C 4.3 mW/°C Thermal Resistance, RqJA (Note 1) °C/W Junction−to−Ambient 234 N2 = Specific Device Code M = Date Code* Total Device Dissipation PD (Note 2) G = Pb−Free Package TA = 25°C 1.180 W (Note: Microdot may be in either location) Derate above 25°C 9.4 mW/°C *Date Code orientation may vary depending upon Thermal Resistance, RqJA (Note 2) °C/W manufacturing location. Junction−to−Ambient 106 Thermal Resistance, RqJL (Note 1) 110 °C/W
ORDERING INFORMATION ORDERING INFORMA
Junction−to−Lead #1 RqJL (Note 2) 50 °C/W Total Device Dissipation P
Device Package Shipping
† Dsingle W (Single Pulse < 10 s) (Notes 2 and 3) 1.75 NST489AMT1G TSOP−6 3,000 / Junction and Storage TJ, Tstg −55 to +150 °C (Pb−Free) Tape & Reel Temperature Range NSVT489AMT1G TSOP−6 3,000 / Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be (Pb−Free) Tape & Reel assumed, damage may occur and reliability may be affected. †For information on tape and reel specifications, 1. FR− 4 with 1 oz and 3.9 mm2 of copper area. including part orientation and tape sizes, please 2. FR− 4 with 1 oz and 645 mm2 of copper area. refer to our Tape and Reel Packaging Specifications 3. Refer to Figure 8. Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2011
1
Publication Order Number:
January, 2018 − Rev. 9 NST489AMT1/D