Datasheet NSS40200L, NSV40200L (ON Semiconductor) - 2
| Fabricante | ON Semiconductor |
| Descripción | 40 V, 2.0 A, Low VCE(sat) PNP Transistor |
| Páginas / Página | 6 / 2 — NSS40200L, NSV40200L. MAXIMUM RATINGS. Rating. Symbol. Max. Unit. THERMAL … |
| Revisión | 8 |
| Formato / tamaño de archivo | PDF / 89 Kb |
| Idioma del documento | Inglés |
NSS40200L, NSV40200L. MAXIMUM RATINGS. Rating. Symbol. Max. Unit. THERMAL CHARACTERISTICS. Characteristic. www.onsemi.com
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NSS40200L, NSV40200L MAXIMUM RATINGS
(TA = 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO −40 Vdc Collector-Base Voltage VCBO −40 Vdc Emitter-Base Voltage VEBO −7.0 Vdc Collector Current − Continuous IC −2.0 A Collector Current − Peak ICM −4.0 A Base Current − Peak IBM −300 mA Electrostatic Discharge ESD HBM Class 3B MM Class C
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Total Device Dissipation PD (Note 1) TA = 25°C 460 mW Derate above 25°C 3.7 mW/°C Thermal Resistance, RqJA (Note 1) °C/W Junction−to−Ambient 270 Total Device Dissipation PD (Note 2) TA = 25°C 540 mW Derate above 25°C 4.3 mW/°C Thermal Resistance, RqJA (Note 2) °C/W Junction−to−Ambient 230 Total Device Dissipation PDsingle mW (Single Pulse < 10 sec) (Note 3) 710 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ 100 mm2, 1 oz. copper traces. 2. FR− 4 @ 500 mm2, 1 oz. copper traces. 3. Thermal response.
www.onsemi.com 2
NSS40200L, NSV40200L MAXIMUM RATINGS
(TA = 25°C)
Rating Symbol Max Unit
Collector-Emitter Voltage VCEO −40 Vdc Collector-Base Voltage VCBO −40 Vdc Emitter-Base Voltage VEBO −7.0 Vdc Collector Current − Continuous IC −2.0 A Collector Current − Peak ICM −4.0 A Base Current − Peak IBM −300 mA Electrostatic Discharge ESD HBM Class 3B MM Class C
THERMAL CHARACTERISTICS Characteristic Symbol Max Unit
Total Device Dissipation PD (Note 1) TA = 25°C 460 mW Derate above 25°C 3.7 mW/°C Thermal Resistance, RqJA (Note 1) °C/W Junction−to−Ambient 270 Total Device Dissipation PD (Note 2) TA = 25°C 540 mW Derate above 25°C 4.3 mW/°C Thermal Resistance, RqJA (Note 2) °C/W Junction−to−Ambient 230 Total Device Dissipation PDsingle mW (Single Pulse < 10 sec) (Note 3) 710 Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. FR− 4 @ 100 mm2, 1 oz. copper traces. 2. FR− 4 @ 500 mm2, 1 oz. copper traces. 3. Thermal response.
www.onsemi.com 2