Datasheet NSS40200L, NSV40200L (ON Semiconductor) - 4
| Fabricante | ON Semiconductor |
| Descripción | 40 V, 2.0 A, Low VCE(sat) PNP Transistor |
| Páginas / Página | 6 / 4 — NSS40200L, NSV40200L. TYPICAL CHARACTERISTICS. Figure 1. Collector … |
| Revisión | 8 |
| Formato / tamaño de archivo | PDF / 89 Kb |
| Idioma del documento | Inglés |
NSS40200L, NSV40200L. TYPICAL CHARACTERISTICS. Figure 1. Collector Emitter Saturation Voltage
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NSS40200L, NSV40200L TYPICAL CHARACTERISTICS
0.25 0.35 VCE(sat) = 150°C IC/IB = 100 V IC/IB = 10 CE(sat) = 150°C 0.3 0.2 −55°C 25°C 25°C 0.25 AGE (V) AGE (V) T T OR EMITTER 0.15 OR EMITTER 0.2 −55°C 0.15 0.1 TION VOL TION VOL , COLLECT , COLLECT 0.1 TURA TURA 0.05 CE(sat) SA CE(sat) SA 0.05 V V 0 0 0.001 0.01 0.1 1.0 10 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage Figure 2. Collector Emitter Saturation Voltage vs. Collector Current vs. Collector Current
800 1.1 750 150°C (5.0 V) IC/IB = 10 700 1.0 650 150°C (2.0 V) 0.9 600 AGE (V) −55°C 550 T 0.8 500 25°C (5.0 V) 450 0.7 25°C 400 25°C (2.0 V) , BASE EMITTER TION VOL 350 0.6 sat) , DC CURRENT GAIN 300 −55°C (5.0 V) BE( TURA 0.5 FEh 250 V 150°C SA 200 −55°C (2.0 V) 0.4 150 100 0.3 0.001 0.01 0.1 1.0 10 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector Figure 4. Base Emitter Saturation Voltage vs. Current Collector Current
1.0 1.0 VCE = −2.0 V 10 mA VCE (V) IC = 500 mA 0.9 −55°C 0.8 0.8 100 mA 300 mA 0.7 25°C 0.6 0.6 OR−EMITTER AGE (V) AGE (V) T 0.5 T 0.4 VOL 0.4 150°C VOL , BASE EMITTER TURN−ON , COLLECT 0.3 0.2 on) CEV BE( 0.2 V 0.1 0 0.001 0.01 0.1 1.0 10 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs. Figure 6. Saturation Region Collector Current www.onsemi.com 4
0.25 0.35 VCE(sat) = 150°C IC/IB = 100 V IC/IB = 10 CE(sat) = 150°C 0.3 0.2 −55°C 25°C 25°C 0.25 AGE (V) AGE (V) T T OR EMITTER 0.15 OR EMITTER 0.2 −55°C 0.15 0.1 TION VOL TION VOL , COLLECT , COLLECT 0.1 TURA TURA 0.05 CE(sat) SA CE(sat) SA 0.05 V V 0 0 0.001 0.01 0.1 1.0 10 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage Figure 2. Collector Emitter Saturation Voltage vs. Collector Current vs. Collector Current
800 1.1 750 150°C (5.0 V) IC/IB = 10 700 1.0 650 150°C (2.0 V) 0.9 600 AGE (V) −55°C 550 T 0.8 500 25°C (5.0 V) 450 0.7 25°C 400 25°C (2.0 V) , BASE EMITTER TION VOL 350 0.6 sat) , DC CURRENT GAIN 300 −55°C (5.0 V) BE( TURA 0.5 FEh 250 V 150°C SA 200 −55°C (2.0 V) 0.4 150 100 0.3 0.001 0.01 0.1 1.0 10 0.001 0.01 0.1 1.0 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector Figure 4. Base Emitter Saturation Voltage vs. Current Collector Current
1.0 1.0 VCE = −2.0 V 10 mA VCE (V) IC = 500 mA 0.9 −55°C 0.8 0.8 100 mA 300 mA 0.7 25°C 0.6 0.6 OR−EMITTER AGE (V) AGE (V) T 0.5 T 0.4 VOL 0.4 150°C VOL , BASE EMITTER TURN−ON , COLLECT 0.3 0.2 on) CEV BE( 0.2 V 0.1 0 0.001 0.01 0.1 1.0 10 0.01 0.1 1.0 10 100 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA)
Figure 5. Base Emitter Turn−On Voltage vs. Figure 6. Saturation Region Collector Current www.onsemi.com 4