Datasheet DN3545 (Microchip) - 2

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DN3545 1.0 ELECTRICAL CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS†
Drain-to-Source Voltage ... BVDSX Drain-to-Gate Voltage... BVDGX Gate-to-Source Voltage.. ±20V Operating Ambient Temperature, TA .. –55°C to +150°C Storage Temperature, TS .. –55°C to +150°C 
† Notice:
Stresses above those listed under “Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS Electrical Specifications:
TA = 25°C unless otherwise specified. All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle.
Parameter Sym. Min. Typ. Max. Unit Conditions
Drain-to-Source Breakdown Voltage BVDSX 450 — — V VGS = –5V, ID = 100 µA Gate-to-Source Off Voltage VGS(OFF) –1.5 — –3.5 V VDS = 25V, ID = 10 µA VGS(OFF) Change with Temperature ∆VGS(OFF) — — –4.5 mV/°C VDS = 25V, ID = 10 µA (
Note 1
) Gate Body Leakage Current IGSS — — 100 nA VGS = ±20V, VDS = 0V V — — 1 µA DS = Maximum rating, V Drain-to-Source Leakage Current I GS = –5V D(OFF) V — — 1 mA DS = 0.8 Maximum rating, VGS = –5V, TA = 125°C (
Note 1
) Saturated Drain-to-Source Current IDSS 200 — — mA VGS = 0V, VDS = 15V Static Drain-to-Source On-State R Resistance DS(ON) — — 20 Ω VGS = 0V, ID = 150 mA Change in RDS(ON) with Temperature ∆RDS(ON) — — 1.1 %/°C VGS = 0V, ID = 150 mA (
Note 1
)
Note 1:
Specification is obtained by characterization and is not 100% tested.
AC ELECTRICAL CHARACTERISTICS Electrical Specifications:
Unless otherwise specified, for all specifications TA = 25°C. Specification is obtained by characterization and is not 100% tested.
Parameter Sym. Min. Typ. Max. Unit Conditions
Forward Transconductance GFS 150 — — mmho VDS = 10V, ID = 100 mA Input Capacitance CISS — — 360 pF VGS = –5V, Common Source Output Capacitance C V OSS — — 40 pF DS = 25V, f = 1 MHz Reverse Transfer Capacitance CRSS — — 15 pF Turn-On Delay Time td(ON) — — 20 ns VDD = 25V, Rise Time tr — — 30 ns ID = 150 mA, Turn-Off Delay Time t R d(OFF) — — 30 ns GEN = 25Ω, VGS = 0V to –10V Fall Time tf — — 40 ns
DIODE PARAMETER
Diode Forward Voltage Drop VSD — — 1.8 V VGS = –5V, ISD = 150 mA (
Note 1
) Reverse Recovery Time trr — 800 — ns VGS = –5V, ISD = 150 mA
Note 1:
All DC parameters are 100% tested at 25°C unless otherwise stated. Pulse test: 300 µs pulse, 2% duty cycle. DS20005438A-page 2  2018 Microchip Technology Inc. Document Outline 1.0 Electrical Characteristics 2.0 Typical Performance Curves FIGURE 2-1: Output Characteristics. FIGURE 2-2: Transconductance vs. Drain Current. FIGURE 2-3: Maximum Rated Safe Operating Area. FIGURE 2-4: Saturation Characteristics. FIGURE 2-5: Power Dissipation vs. Ambient Temperature. FIGURE 2-6: Thermal Response Characteristics. FIGURE 2-7: BVDSS Variation with Temperature. FIGURE 2-8: Transfer Characteristics. FIGURE 2-9: Capacitance vs. Drain-to- Source Voltage. FIGURE 2-10: On-Resistance vs. Drain Current. FIGURE 2-11: VGS(th) and RDS(ON) Variation with Temperature. FIGURE 2-12: Gate Drive Dynamic Characteristics. 3.0 Pin Description TABLE 3-1: 3-lead TO-92 Pin Function Table TABLE 3-2: 3-lead SOT-89 Pin Function Table 4.0 Functional Description FIGURE 4-1: Switching Waveforms and Test Circuit. TABLE 4-1: Product Summary 5.0 Packaging Information 5.1 Package Marking Information AMERICAS Corporate Office Atlanta Austin, TX Boston Chicago Dallas Detroit Houston, TX Indianapolis Los Angeles Raleigh, NC New York, NY San Jose, CA Canada - Toronto ASIA/PACIFIC Australia - Sydney China - Beijing China - Chengdu China - Chongqing China - Dongguan China - Guangzhou China - Hangzhou China - Hong Kong SAR China - Nanjing China - Qingdao China - Shanghai China - Shenyang China - Shenzhen China - Suzhou China - Wuhan China - Xian China - Xiamen China - Zhuhai ASIA/PACIFIC India - Bangalore India - New Delhi India - Pune Japan - Osaka Japan - Tokyo Korea - Daegu Korea - Seoul Malaysia - Kuala Lumpur Malaysia - Penang Philippines - Manila Singapore Taiwan - Hsin Chu Taiwan - Kaohsiung Taiwan - Taipei Thailand - Bangkok Vietnam - Ho Chi Minh EUROPE Austria - Wels Denmark - Copenhagen Finland - Espoo France - Paris Germany - Garching Germany - Haan Germany - Heilbronn Germany - Karlsruhe Germany - Munich Germany - Rosenheim Israel - Ra’anana Italy - Milan Italy - Padova Netherlands - Drunen Norway - Trondheim Poland - Warsaw Romania - Bucharest Spain - Madrid Sweden - Gothenberg Sweden - Stockholm UK - Wokingham