Datasheet PHK12NQ03LT (Nexperia) - 8
| Fabricante | Nexperia |
| Descripción | N-channel TrenchMOS logic level FET |
| Páginas / Página | 13 / 8 — Philips Semiconductors. PHK12NQ03LT. N-channel TrenchMOS™ logic level … |
| Revisión | 01032004 |
| Formato / tamaño de archivo | PDF / 212 Kb |
| Idioma del documento | Inglés |
Philips Semiconductors. PHK12NQ03LT. N-channel TrenchMOS™ logic level FET. Fig 9
Línea de modelo para esta hoja de datos
Versión de texto del documento
Philips Semiconductors PHK12NQ03LT N-channel TrenchMOS™ logic level FET
03aa33 03ai52 2.5 10-1 VGS(th) ID (V) (A) 2 max 10-2 1.5 typ 10-3 min typ max 1 min 10-4 0.5 10-5 0 10-6 -60 0 60 120 180 0 1 2 3 Tj (°C) VGS (V) ID = 250 µA; VDS = VGS Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature. gate-source voltage.
003aaa165 003aaa166 104 20 VGS = 0 V IS C (A) (pF) 15 Ciss 103 10 Coss 5 150 °C Tj = 25 °C Crss 102 0 10-1 1 10 102 0.4 0.6 0.8 1 VDS (V) VSD (V) VGS = 0 V; f = 1 MHz Tj = 25 °C and 150 °C; VGS = 0 V
Fig 11. Input, output and reverse transfer capacitances Fig 12. Source (diode forward) current as a function of as a function of drain-source voltage; typical source-drain (diode forward) voltage; typical values. values.
9397 750 12955 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 02 — 02 March 2004 7 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 5.1 Transient thermal impedance 6. Characteristics 7. Package outline 8. Revision history 9. Data sheet status 10. Definitions 11. Disclaimers 12. Trademarks
03aa33 03ai52 2.5 10-1 VGS(th) ID (V) (A) 2 max 10-2 1.5 typ 10-3 min typ max 1 min 10-4 0.5 10-5 0 10-6 -60 0 60 120 180 0 1 2 3 Tj (°C) VGS (V) ID = 250 µA; VDS = VGS Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of Fig 10. Sub-threshold drain current as a function of junction temperature. gate-source voltage.
003aaa165 003aaa166 104 20 VGS = 0 V IS C (A) (pF) 15 Ciss 103 10 Coss 5 150 °C Tj = 25 °C Crss 102 0 10-1 1 10 102 0.4 0.6 0.8 1 VDS (V) VSD (V) VGS = 0 V; f = 1 MHz Tj = 25 °C and 150 °C; VGS = 0 V
Fig 11. Input, output and reverse transfer capacitances Fig 12. Source (diode forward) current as a function of as a function of drain-source voltage; typical source-drain (diode forward) voltage; typical values. values.
9397 750 12955 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 02 — 02 March 2004 7 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 5.1 Transient thermal impedance 6. Characteristics 7. Package outline 8. Revision history 9. Data sheet status 10. Definitions 11. Disclaimers 12. Trademarks