Datasheet PHK12NQ03LT (Nexperia) - 7
| Fabricante | Nexperia |
| Descripción | N-channel TrenchMOS logic level FET |
| Páginas / Página | 13 / 7 — Philips Semiconductors. PHK12NQ03LT. N-channel TrenchMOS™ logic level … |
| Revisión | 01032004 |
| Formato / tamaño de archivo | PDF / 212 Kb |
| Idioma del documento | Inglés |
Philips Semiconductors. PHK12NQ03LT. N-channel TrenchMOS™ logic level FET. Fig 5. Output characteristics: drain current as a
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Philips Semiconductors PHK12NQ03LT N-channel TrenchMOS™ logic level FET
003aaa162 003aaa163 16 20 5 V 4 V I V D I DS > ID x RDSon D (A) (A) 12 15 2.8 V 8 10 2.5 V 4 5 150 °C Tj = 25 °C VGS = 2.2 V 0 0 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 V V DS (V) GS (V) Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a function of drain-source voltage; typical values. function of gate-source voltage; typical values.
003aaa164 03aa27 0.1 2 2.8 V RDSon VGS = 2.5 V a (Ω) 0.08 1.5 0.06 1 0.04 4 V 0.5 0.02 5 V 0 0 0 4 8 12 16 -60 0 60 120 180 ID (A) Tj (°C) Tj = 25 °C R a DSon = --------------- RDSon(25°C)
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain source on-state resistance of drain current; typical values. factor as a function of junction temperature.
9397 750 12955 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 02 — 02 March 2004 6 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 5.1 Transient thermal impedance 6. Characteristics 7. Package outline 8. Revision history 9. Data sheet status 10. Definitions 11. Disclaimers 12. Trademarks
003aaa162 003aaa163 16 20 5 V 4 V I V D I DS > ID x RDSon D (A) (A) 12 15 2.8 V 8 10 2.5 V 4 5 150 °C Tj = 25 °C VGS = 2.2 V 0 0 0 0.2 0.4 0.6 0.8 1 0 1 2 3 4 V V DS (V) GS (V) Tj = 25 °C Tj = 25 °C and 150 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a Fig 6. Transfer characteristics: drain current as a function of drain-source voltage; typical values. function of gate-source voltage; typical values.
003aaa164 03aa27 0.1 2 2.8 V RDSon VGS = 2.5 V a (Ω) 0.08 1.5 0.06 1 0.04 4 V 0.5 0.02 5 V 0 0 0 4 8 12 16 -60 0 60 120 180 ID (A) Tj (°C) Tj = 25 °C R a DSon = --------------- RDSon(25°C)
Fig 7. Drain-source on-state resistance as a function Fig 8. Normalized drain source on-state resistance of drain current; typical values. factor as a function of junction temperature.
9397 750 12955 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data Rev. 02 — 02 March 2004 6 of 12
Document Outline 1. Product profile 1.1 Description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Limiting values 5. Thermal characteristics 5.1 Transient thermal impedance 6. Characteristics 7. Package outline 8. Revision history 9. Data sheet status 10. Definitions 11. Disclaimers 12. Trademarks