Datasheet MTD1N60E (Motorola) - 10

FabricanteMotorola
DescripciónTMOS E−FET Power Field Effect Transistor DPAK for Surface Mount. N−Channel Enhancement−Mode Silicon Gate
Páginas / Página10 / 10 — PACKAGE DIMENSIONS. −T−. CASE 369A−13. ISSUE W. Literature Distribution …
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PACKAGE DIMENSIONS. −T−. CASE 369A−13. ISSUE W. Literature Distribution Centers:. MTD1N60E/D

PACKAGE DIMENSIONS −T− CASE 369A−13 ISSUE W Literature Distribution Centers: MTD1N60E/D

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MTD1N60E
PACKAGE DIMENSIONS
NOTES: SEATING
−T−
1. DIMENSIONING AND TOLERANCING PER ANSI PLANE Y14.5M, 1982.
B C
2. CONTROLLING DIMENSION: INCH.
V R E
INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.235 0.250 5.97 6.35 B 0.250 0.265 6.35 6.73
4
C 0.086 0.094 2.19 2.38
Z
D 0.027 0.035 0.69 0.88
A
E 0.033 0.040 0.84 1.01
S
F 0.037 0.047 0.94 1.19
1 2 3 U
G 0.180 BSC 4.58 BSC H 0.034 0.040 0.87 1.01
K
J 0.018 0.023 0.46 0.58 K 0.102 0.114 2.60 2.89 L 0.090 BSC 2.29 BSC
F J
R 0.175 0.215 4.45 5.46
L
STYLE 2: S 0.020 0.050 0.51 1.27
H
PIN 1. GATE U 0.020 0.51 2. DRAIN V 0.030 0.050 0.77 1.27
D
2 PL 3. SOURCE Z 0.138 3.51
G
0.13 (0.005) M T 4. DRAIN
CASE 369A−13 ISSUE W
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Literature Distribution Centers:
USA: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4−32−1, Nishi−Gotanda, Shinagawa−ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 10 Motorola TMOS Power MOSFET Transistor Device Data ◊
MTD1N60E/D
*MTD1N60E/D*