Datasheet MMBT4403 (Diodes) - 2
| Fabricante | Diodes |
| Descripción | 40V PNP SURFACE MOUNT SMALL SIGNAL TRANSISTOR IN SOT23 |
| Páginas / Página | 6 / 2 — MMBT4403. Maximum Ratings. Thermal Characteristics. Characteristic … |
| Formato / tamaño de archivo | PDF / 153 Kb |
| Idioma del documento | Inglés |
MMBT4403. Maximum Ratings. Thermal Characteristics. Characteristic Symbol. Value. Unit. Derating Curve. Transient Thermal Impedance
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MMBT4403 Maximum Ratings
(@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -6.0 V Collector Current - Continuous (Note 7) IC -600 mA
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Note 5) 310 Collector Power Dissipation PD mW (Note 6) 350 (Note 5) 403 Thermal Resistance, Junction to Ambient RθJA °C/W (Note 6) 357 Thermal Resistance, Junction to Leads (Note 7) RθJL 350 °C/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 0.4 400 ) 350 (W /W 0.3 n 300 °C tio ( a 250 p ce D=0.5 0.2 n 200 a issi st 150 D=0.1 r D si e e Single Pulse 0.1 100 D=0.2 w o l R a 50 D=0.05 x P rm 0.0 a 0 e 0 25 50 75 100 125 150 h 100µ 1m 10m 100m 1 10 100 1k M T Temperature (°C) Pulse Width (s)
Derating Curve Transient Thermal Impedance
10 Single Pulse. T =25°C amb (W) n io at p 1 si s r Di we o P x 0.1 a 10m 100m 1 10 100 1k M Pulse Width (s)
Pulse Power Dissipation
MMBT4403 2 of 6 March 2012 Document Number: DS30058 Rev. 11 - 2
www.diodes.com
© Diodes Incorporated
(@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -40 V Emitter-Base Voltage VEBO -6.0 V Collector Current - Continuous (Note 7) IC -600 mA
Thermal Characteristics
(@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
(Note 5) 310 Collector Power Dissipation PD mW (Note 6) 350 (Note 5) 403 Thermal Resistance, Junction to Ambient RθJA °C/W (Note 6) 357 Thermal Resistance, Junction to Leads (Note 7) RθJL 350 °C/W Operating and Storage Temperature Range TJ,TSTG -55 to +150 °C Notes: 5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 6. For the device mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. 7. Thermal resistance from junction to solder-point (at the end of the collector lead). 0.4 400 ) 350 (W /W 0.3 n 300 °C tio ( a 250 p ce D=0.5 0.2 n 200 a issi st 150 D=0.1 r D si e e Single Pulse 0.1 100 D=0.2 w o l R a 50 D=0.05 x P rm 0.0 a 0 e 0 25 50 75 100 125 150 h 100µ 1m 10m 100m 1 10 100 1k M T Temperature (°C) Pulse Width (s)
Derating Curve Transient Thermal Impedance
10 Single Pulse. T =25°C amb (W) n io at p 1 si s r Di we o P x 0.1 a 10m 100m 1 10 100 1k M Pulse Width (s)
Pulse Power Dissipation
MMBT4403 2 of 6 March 2012 Document Number: DS30058 Rev. 11 - 2
www.diodes.com
© Diodes Incorporated