Datasheet RFP30N06LE, RF1S30N06LESM (Fairchild) - 3
| Fabricante | Fairchild |
| Descripción | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| Páginas / Página | 8 / 3 — RFP30N06LE, RF1S30N06LESM. Typical Performance Curves. 1.2. R IE L. 1.0. … |
| Formato / tamaño de archivo | PDF / 194 Kb |
| Idioma del documento | Inglés |
RFP30N06LE, RF1S30N06LESM. Typical Performance Curves. 1.2. R IE L. 1.0. IP T. 0.8. N M IO T. 0.6. A IP S. 0.4. DRAIN CURRE ,. R DIS. I D. 0.2. O P
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RFP30N06LE, RF1S30N06LESM Typical Performance Curves
Unless Otherwise Specified
1.2 40 R IE L 1.0 ) IP T 30 L (A U 0.8 NT N M IO T 0.6 20 A IP S 0.4 DRAIN CURRE , R DIS 10 E I D W 0.2 O P 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE CASE TEMPERATURE 1 0.5 D E 0.2 IZ ANCE D AL E P P 0.1 DM RM 0.1 IM L 0.05 t1 , NO A M t2 JC 0.02
θ
R Z E 0.01 NOTES: H T DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x Z
θ
JC x R
θ
JC + TC 0.01 10-5 10-3 10-2 10-1 100 101 10-4 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 500 TC = 25oC ) 100 TJ = MAX RATED (A FOR TEMPERATURES Y ABOVE 25oC DERATE PEAK ) IT CURRENT AS FOLLOWS: (A 175
–
T T ABIL
c
N I = I
------------
100ms VGS = 10V 25 150
CAP NT 100 10 1ms OPERATION IN THIS V TC = 25oC DRAIN CURRE GS = 5V , AREA MAY BE 10ms I D AK CURRE LIMITED BY rDS(ON) E TRANSCONDUCTANCE 100ms , P MAY LIMIT CURRENT DC DM I IN THIS REGION 1 20 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (s) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1
Unless Otherwise Specified
1.2 40 R IE L 1.0 ) IP T 30 L (A U 0.8 NT N M IO T 0.6 20 A IP S 0.4 DRAIN CURRE , R DIS 10 E I D W 0.2 O P 0 0 0 25 50 75 100 125 150 175 25 50 75 100 125 150 175 TC, CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs TEMPERATURE CASE TEMPERATURE 1 0.5 D E 0.2 IZ ANCE D AL E P P 0.1 DM RM 0.1 IM L 0.05 t1 , NO A M t2 JC 0.02
θ
R Z E 0.01 NOTES: H T DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x Z
θ
JC x R
θ
JC + TC 0.01 10-5 10-3 10-2 10-1 100 101 10-4 t, RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 200 500 TC = 25oC ) 100 TJ = MAX RATED (A FOR TEMPERATURES Y ABOVE 25oC DERATE PEAK ) IT CURRENT AS FOLLOWS: (A 175
–
T T ABIL
c
N I = I
------------
100ms VGS = 10V 25 150
CAP NT 100 10 1ms OPERATION IN THIS V TC = 25oC DRAIN CURRE GS = 5V , AREA MAY BE 10ms I D AK CURRE LIMITED BY rDS(ON) E TRANSCONDUCTANCE 100ms , P MAY LIMIT CURRENT DC DM I IN THIS REGION 1 20 1 10 100 10-6 10-5 10-4 10-3 10-2 10-1 100 101 VDS, DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (s) FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1