Datasheet RFP30N06LE, RF1S30N06LESM (Fairchild)
| Fabricante | Fairchild |
| Descripción | 30A, 60V, ESD Rated, 0.047 Ohm, Logic Level N-Channel Power MOSFETs |
| Páginas / Página | 8 / 1 — RFP30N06LE, RF1S30N06LESM. Data Sheet. January 2004. 30A, 60V, ESD Rated, … |
| Formato / tamaño de archivo | PDF / 194 Kb |
| Idioma del documento | Inglés |
RFP30N06LE, RF1S30N06LESM. Data Sheet. January 2004. 30A, 60V, ESD Rated, 0.047 Ohm, Logic. Features
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RFP30N06LE, RF1S30N06LESM Data Sheet January 2004 30A, 60V, ESD Rated, 0.047 Ohm, Logic Features Level N-Channel Power MOSFETs
• 30A, 60V These are N-Channel power MOSFETs manufactured using • rDS(ON) = 0.047Ω the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives • 2kV ESD Protected optimum utilization of silicon, resulting in outstanding • Temperature Compensating PSPICE® Model performance. They were designed for use in applications such as switching regulators, switching converters, motor • Peak Current vs Pulse Width Curve drivers and relay drivers. These transistors can be operated • UIS Rating Curve directly from integrated circuits. • Related Literature These transistors incorporate ESD protection and are - TB334 “Guidelines for Soldering Surface Mount designed to withstand 2kV (Human Body Model) of ESD. Components to PC Boards” Formerly developmental type TA49027.
Symbol Ordering Information D PART NUMBER PACKAGE BRAND
RFP30N06LE TO-220AB P30N06LE
G
RF1S30N06LESM TO-263AB 1S30N06L NOTE: When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
S Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE GATE DRAIN (FLANGE) DRAIN (FLANGE) SOURCE
©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1
• 30A, 60V These are N-Channel power MOSFETs manufactured using • rDS(ON) = 0.047Ω the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives • 2kV ESD Protected optimum utilization of silicon, resulting in outstanding • Temperature Compensating PSPICE® Model performance. They were designed for use in applications such as switching regulators, switching converters, motor • Peak Current vs Pulse Width Curve drivers and relay drivers. These transistors can be operated • UIS Rating Curve directly from integrated circuits. • Related Literature These transistors incorporate ESD protection and are - TB334 “Guidelines for Soldering Surface Mount designed to withstand 2kV (Human Body Model) of ESD. Components to PC Boards” Formerly developmental type TA49027.
Symbol Ordering Information D PART NUMBER PACKAGE BRAND
RFP30N06LE TO-220AB P30N06LE
G
RF1S30N06LESM TO-263AB 1S30N06L NOTE: When ordering use the entire part number. Add suffix, 9A, to obtain the TO-263 variant in tape and reel i.e. RF1S30N06LESM9A.
S Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE GATE DRAIN (FLANGE) DRAIN (FLANGE) SOURCE
©2004 Fairchild Semiconductor Corporation RFP30N06LE, RF1S30N06LESM Rev. B1