Datasheet SEP8706 (Honeywell) - 3

SEP8706 AlGaAs Infrared Emitting Diode
Fig. 1 Radiant Intensity vs Fig. 2 Radiant Intensity vs Angular Displacement gra_030.ds4 Forward Current gra_028.ds4 1.0 10.0 ity 0.9 s n 5.0 0.8 te ity s T = 25 °C n 0.7 t in A n 2.0 te 0.6 ia in d e 0.5 1.0 ra tiv 0.4 d la e 0.5 e 0.3 liz R a 0.2 rm 0.2 0.1 o N 0.0 0.1 -60 -45 -30 -15 0 +15 +30 +45 +60 10 20 30 40 50 100 Angular displacement - degrees Forward current - mA Fig. 3 Forward Voltage vs Fig. 4 Forward Voltage vs Forward Current gra_201.ds4 Temperature gra_208.ds4 1.6 1.60 1.55 1.5 - V - V 1.50 e e g 1.4 g 1.45 lta lta o o v 1.3 v 1.40 rd rd a 1.35 1.2 a I = 20 mA rw rw F o o 1.30 F 1.1 F 1.25 1.0 1.20 0 10 20 30 40 50 -40 -15 10 35 60 85 Forward current - mA Temperature - °C Fig. 5 Spectral Bandwidth Fig. 6 Coupling Characteristics gra_011.ds4 with SDP8406 gra_031.ds4 1.0 10 0.9 6 0.8 4 ity A s n 0.7 2 te 0.6 t - m n in e 0.5 rre 1.0 u tiv 0.4 0.6 la t c e 0.3 h 0.4 I = 20 mA R ig F 0.2 L 0.2 V = 5V CE 0.1 T = 25 °C A 0.0 0.1 760 800 840 880 920 960 1000 0.01 0.02 0.05 0.1 0.2 0.5 1.0 Wavelength - nm Lens-to-lens separation - inches Honeywell reserves the right to make changes in order to improve design and 54 h supply the best products possible.