Datasheet SEP8706 (Honeywell) - 2
| Fabricante | Honeywell |
| Descripción | AlGaAs Infrared Emitting Diode |
| Páginas / Página | 4 / 2 — SEP8706 AlGaAs Infrared Emitting Diode. ELECTRICAL CHARACTERISTICS. … |
| Formato / tamaño de archivo | PDF / 430 Kb |
| Idioma del documento | Inglés |
SEP8706 AlGaAs Infrared Emitting Diode. ELECTRICAL CHARACTERISTICS. PARAMETER. SYMBOL. MIN. TYP. MAX. UNITS. TEST CONDITIONS
Línea de modelo para esta hoja de datos
Versión de texto del documento
SEP8706 AlGaAs Infrared Emitting Diode ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL MIN TYP MAX UNITS TEST CONDITIONS ABSOLUTE MAXIMUM RATINGS SCHEMATIC
(25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and h 53 supply the best products possible.
(25¡C Free-Air Temperature unless otherwise noted) Continuous Forward Current 50 mA Power Dissipation 100 mW [À] Operating Temperature Range -40¡C to 85¡C Storage Temperature Range -40¡C to 85¡C Soldering Temperature (5 sec) 240¡C Notes 1. Derate linearly from 25¡C free-air temperature at the rate of 0.78 mW/¡C. Honeywell reserves the right to make changes in order to improve design and h 53 supply the best products possible.