Datasheet SiSS22DN (Vishay) - 5
| Fabricante | Vishay |
| Descripción | N-Channel 60 V (D-S) MOSFET |
| Páginas / Página | 7 / 5 — SiSS22DN. TYPICAL CHARACTERISTICS. Current Derating a. Power, … |
| Formato / tamaño de archivo | PDF / 199 Kb |
| Idioma del documento | Inglés |
SiSS22DN. TYPICAL CHARACTERISTICS. Current Derating a. Power, Junction-to-Case. Power, Junction-to-Ambient. Note
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SiSS22DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 100 10000 80 ) 1000 60 ne rrent (A ne ne u C n 1st li 2nd li 40 2nd li rai D 100 - I D 20 0 10 0 25 50 75 100 125 150 T - Case Temperature (°C) C 2nd line
Current Derating a
Axis Title Axis Title 80 10000 2.5 10000 64 2.0 1000 1000 ) 48 1.5 ne ne ne ne ne ne r (W r (W e e w 1st li w 2nd li o 1st li 32 2nd li 2nd li o 2nd li P 1.0 P 100 100 16 0.5 0 10 0 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A 2nd line 2nd line
Power, Junction-to-Case Power, Junction-to-Ambient Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0729-Rev. A, 23-Jul-2018
5
Document Number: 77889 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title 100 10000 80 ) 1000 60 ne rrent (A ne ne u C n 1st li 2nd li 40 2nd li rai D 100 - I D 20 0 10 0 25 50 75 100 125 150 T - Case Temperature (°C) C 2nd line
Current Derating a
Axis Title Axis Title 80 10000 2.5 10000 64 2.0 1000 1000 ) 48 1.5 ne ne ne ne ne ne r (W r (W e e w 1st li w 2nd li o 1st li 32 2nd li 2nd li o 2nd li P 1.0 P 100 100 16 0.5 0 10 0 10 0 25 50 75 100 125 150 0 25 50 75 100 125 150 T - Case Temperature (°C) T - Ambient Temperature (°C) C A 2nd line 2nd line
Power, Junction-to-Case Power, Junction-to-Ambient Note
a. The power dissipation PD is based on TJ max. = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S18-0729-Rev. A, 23-Jul-2018
5
Document Number: 77889 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000