Datasheet SiSS22DN (Vishay) - 4

SiSS22DN
www.vishay.com Vishay Siliconix
TYPICAL CHARACTERISTICS
(25 °C, unless otherwise noted) Axis Title Axis Title 100 10000 0.6 10000 0.3 ) 10 ) (A 1000 (V 0 1000 e c rrent ne n a ne u T = 150 °C J T = 25 °C J ne ne ri I = 5 mA D ne ne 1 Va -0.3 ) - 1st li 2nd li 2nd li 2nd li 1st li 2nd li S(th ource C G 100 S V -0.6 100 - 0.1 I S I = 250 μA D -0.9 0.01 10 -1.2 10 0 0.2 0.4 0.6 0.8 1.0 -50 -25 0 25 50 75 100 125 150 V - Source-to-Drain Voltage (V) T - Temperature (°C) SD J 2nd line 2nd line
Source-Drain Diode Forward Voltage Threshold Voltage
Axis Title Axis Title 0.02 10000 100 10000 I = 10 A D 0.016 80 Ω) 1000 1000 ) tance ( 0.012 60 s ne ne ne ne ne ne r (W e -Resi 1st li w 2nd li o 1st li 2nd li 0.008 2nd li 2nd li On 40 P - T = 150 °C J 100 100 ) n DS(o 0.004 R 20 T = 25 °C J 0 10 0 10 0 2 4 6 8 10 0.001 0.01 0.1 1 10 V - Gate-to-Source Voltage (V) GS Time (s) 2nd line 2nd line
On-Resistance vs. Gate-to-Source Voltage Single Pulse Power, Junction-to-Ambient
Axis Title 1000 10000 I limited DM 100 ) I limited D 1000 10 100 μs ne rrent (A ne ne u C n Limited by 1 ms 1st li 2nd li 1 (1) 2nd li rai RDS(on) 10 ms D 100 - 100 ms I D 0.1 1 s 10 s T = 25 °C A Single pulse DC BVDSS limited 0.01 10 0.01 0.1 1 10 100 V - Drain-to-Source Voltage (V) DS (1) V > minimum V at which R is specified GS GS DS(on)
Safe Operating Area, Junction-to-Ambient
S18-0729-Rev. A, 23-Jul-2018
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