Datasheet F3L11MR12W2M1_B65 (Infineon) - 2

F3L11MR12W2M1_B65
VorläufigeDaten PreliminaryData MOSFET/MOSFET HöchstzulässigeWerte/MaximumRatedValues
Drain-Source-Spannung Drain-sourcevoltage Tvj = 25°C VDSS 1200 V Drain-Gleichstrom DCdraincurrent Tvj = 175°C, VGS = 15 V TH = 5°C ID nom 100 A GepulsterDrainstrom verifiziertdurchDesign,tplimitiertdurchTvjmax Pulseddraincurrent verifiedbydesign,t ID pulse 200 A plimitedbyTvjmax Gate-SourceSpannung Gate-sourcevoltage VGSS -10 / 20 V
CharakteristischeWerte/CharacteristicValues
min. typ. max. Einschaltwiderstand ID = 100 A Tvj = 25°C 11,3 Drain-sourceonresistance VGS = 15 V Tvj = 125°C RDS on 14,8 mΩ Tvj = 150°C 16,5 Gate-Schwellenspannung ID=40,0mA,VDS=VGS,Tvj=25°C Gatethresholdvoltage (testedafter1mspulseatVGS=+20V) VGS(th) 3,45 4,50 5,55 V GesamtGateladung Totalgatecharge VGS = -5 V / 15 V, VDS = 800 V QG 0,248 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 1,0 Ω Eingangskapazität f = 1 MHz, Tvj = 25°C Inputcapacitance C V iss 7,36 nF DS = 800 V, VGS = 0 V, VAC = 25 mV Ausgangskapazität f = 1 MHz, Tvj = 25°C Outputcapacitance C V oss 0,44 nF DS = 800 V, VGS = 0 V, VAC = 25 mV Rückwirkungskapazität f = 1 MHz, Tvj = 25°C Reversetransfercapacitance C V rss 0,056 nF DS = 800 V, VGS = 0 V, VAC = 25 mV COSSSpeicherenergie Tvj = 25°C C Eoss 176 µJ OSSstoredenergy VDS = 800 V, VGS = -5 V / 15 V Drain-Source-Reststrom Zerogatevoltagedraincurrent VDS = 1200 V, VGS = -5 V Tvj = 25°C IDSS 0,40 380 µA Gate-Source-Reststrom VDS = 0 V VGS = 20 V 400 Gate-sourceleakagecurrent I nA T GSS vj = 25°C VGS = -10 V Einschaltverzögerungszeit,induktiveLast ID = 100 A, VDS = 600 V Tvj = 25°C 26,7 Turnondelaytime,inductiveload VGS = -5 V / 15 V Tvj = 125°C td on 25,0 ns RGon = 4,70 Ω Tvj = 150°C 23,8 Anstiegszeit,induktiveLast ID = 100 A, VDS = 600 V Tvj = 25°C 23,4 Risetime,inductiveload VGS = -5 V / 15 V Tvj = 125°C tr 22,9 ns RGon = 4,70 Ω Tvj = 150°C 21,9 Abschaltverzögerungszeit,induktiveLast ID = 100 A, VDS = 600 V Tvj = 25°C 82,9 Turnoffdelaytime,inductiveload VGS = -5 V / 15 V Tvj = 125°C td off 85,7 ns RGoff = 4,70 Ω Tvj = 150°C 86,3 Fallzeit,induktiveLast ID = 100 A, VDS = 600 V Tvj = 25°C 18,5 Falltime,inductiveload VGS = -5 V / 15 V Tvj = 125°C tf 20,8 ns RGoff = 4,70 Ω Tvj = 150°C 21,7 EinschaltverlustenergieproPuls ID = 100 A, VDS = 600 V, Lσ = 35 nH Tvj = 25°C 1,57 Turn-onenergylossperpulse di/dt = 5,00 kA/µs (Tvj = 150°C) Tvj = 125°C Eon 1,59 mJ VGS = -5 V / 15 V, RGon = 4,70 Ω Tvj = 150°C 1,62 AbschaltverlustenergieproPuls ID = 100 A, VDS = 600 V, Lσ = 35 nH Tvj = 25°C 1,33 Turn-offenergylossperpulse du/dt = 23,0 kV/µs (Tvj = 150°C) Tvj = 125°C Eoff 1,42 mJ VGS = -5 V / 15 V, RGoff = 4,70 Ω Tvj = 150°C 1,44 Wärmewiderstand,ChipbisKühlkörper Thermalresistance,junctiontoheatsink proMOSFET/perMOSFET RthJH 0,660 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C
BodyDiode/Bodydiode HöchstzulässigeWerte/MaximumRatedValues
BodyDiode-Gleichstrom DCbodydiodeforwardcurrent Tvj = 175°C, VGS = -5 V TH = 5°C ISD 32 A
CharakteristischeWerte/CharacteristicValues
min. typ. max. Durchlassspannung ISD = 100 A, VGS = -5 V Tvj = 25°C 4,60 5,65 Forwardvoltage ISD = 100 A, VGS = -5 V Tvj = 125°C VSD 4,35 V ISD = 100 A, VGS = -5 V Tvj = 150°C 4,30 Datasheet 2 V2.1 2019-06-26 Document Outline / MOSFET / MOSFET IGBT,3-Level / IGBT,3-Level Diode, 3-Level / Diode, 3-Level Modul / Module NTC-Widerstand / NTC-Thermistor Diagramme / charts Diagramme / charts Diagramme / charts Diagramme / charts Schaltplan / Circuit diagram Gehäuseabmessungen / Package outlines /