Datasheet BC846, BC847, BC848 (ON Semiconductor) - 10
| Fabricante | ON Semiconductor |
| Descripción | NPN Bipolar Transistor |
| Páginas / Página | 13 / 10 — BC846, BC847, BC848. BC847C, BC848C. Figure 33. Collector Saturation … |
| Revisión | 12 |
| Formato / tamaño de archivo | PDF / 108 Kb |
| Idioma del documento | Inglés |
BC846, BC847, BC848. BC847C, BC848C. Figure 33. Collector Saturation Region. Figure 34. Base−Emitter Temperature. Coefficient
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BC846, BC847, BC848 BC847C, BC848C
2.0 1.0 C) TA = 25°C ° -55°C to +125°C 1.2 TAGE (V) 1.6 (mV/ IC = 200 mA 1.6 1.2 I I I C = C = C = 50 mA IC = 100 mA COEFFICIENT 2.0 10 mA 20 mA OR-EMITTER VOL 0.8 TURE 2.4 0.4 , COLLECT 2.8 CE , TEMPERA V VBθ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 33. Collector Saturation Region Figure 34. Base−Emitter Temperature Coefficient
10 400 (MHz) 300 7.0 TA = 25°C 200 5.0 Cib V ANCE (pF) 100 CE = 10 V 3.0 T 80 A = 25°C ACIT Cob 60 2.0 C, CAP 40 30 1.0 20 T 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 f, CURRENT-GAIN - BANDWIDTH PRODUCT 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
Figure 35. Capacitances Figure 36. Current−Gain − Bandwidth Product www.onsemi.com 10
2.0 1.0 C) TA = 25°C ° -55°C to +125°C 1.2 TAGE (V) 1.6 (mV/ IC = 200 mA 1.6 1.2 I I I C = C = C = 50 mA IC = 100 mA COEFFICIENT 2.0 10 mA 20 mA OR-EMITTER VOL 0.8 TURE 2.4 0.4 , COLLECT 2.8 CE , TEMPERA V VBθ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 33. Collector Saturation Region Figure 34. Base−Emitter Temperature Coefficient
10 400 (MHz) 300 7.0 TA = 25°C 200 5.0 Cib V ANCE (pF) 100 CE = 10 V 3.0 T 80 A = 25°C ACIT Cob 60 2.0 C, CAP 40 30 1.0 20 T 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 f, CURRENT-GAIN - BANDWIDTH PRODUCT 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
Figure 35. Capacitances Figure 36. Current−Gain − Bandwidth Product www.onsemi.com 10