Datasheet BC846, BC847, BC848 (ON Semiconductor) - 2

BC846, BC847, BC848 ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS
Collector − Emitter Breakdown Voltage BC846 Series V(BR)CEO 65 − − V (IC = 10 mA) BC847 Series 45 − − BC848 Series 30 − − Collector − Emitter Breakdown Voltage BC846 Series V(BR)CES 80 − − V (IC = 10 mA, VEB = 0) BC847 Series 50 − − BC848 Series 30 − − Collector − Base Breakdown Voltage BC846 Series V(BR)CBO 80 − − V (IC = 10 mA) BC847 Series 50 − − BC848 Series 30 − − Emitter − Base Breakdown Voltage BC846 Series V(BR)EBO 6.0 − − V (IE = 1.0 mA) BC847 Series 6.0 − − BC848 Series 5.0 − − Collector Cutoff Current (VCB = 30 V) ICBO − − 15 nA (VCB = 30 V, TA = 150°C) − − 5.0 mA
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A hFE − 90 − − (IC = 10 mA, VCE = 5.0 V) BC846B, BC847B, BC848B − 150 − BC847C, BC848C − 270 − (IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A 110 180 220 BC846B, BC847B, BC848B 200 290 450 BC847C, BC848C 420 520 800 Collector − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VCE(sat) − − 0.25 V Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − − 0.6 Base − Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA) VBE(sat) − 0.7 − V Base − Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) − 0.9 − Base − Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V) VBE(on) 580 660 700 mV Base − Emitter Voltage (IC = 10 mA, VCE = 5.0 V) − − 770
SMALL−SIGNAL CHARACTERISTICS
Current − Gain − Bandwidth Product fT 100 − − MHz (IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo − − 4.5 pF Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kW, f = 1.0 kHz, BW = 200 Hz) NF − − 10 dB
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