Datasheet BC846BDW1, BC847BDW1, BC848CDW1 (ON Semiconductor) - 5
| Fabricante | ON Semiconductor |
| Descripción | Dual NPN Bipolar Transistor |
| Páginas / Página | 11 / 5 — BC846BDW1, BC847BDW1, BC848CDW1. TYPICAL CHARACTERISTICS − BC847BDW1. … |
| Revisión | 11 |
| Formato / tamaño de archivo | PDF / 107 Kb |
| Idioma del documento | Inglés |
BC846BDW1, BC847BDW1, BC848CDW1. TYPICAL CHARACTERISTICS − BC847BDW1. Figure 12. DC Current Gain at VCE = 5 V
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BC846BDW1, BC847BDW1, BC848CDW1 TYPICAL CHARACTERISTICS − BC847BDW1
600 600 VCE = 5 V VCE = 10 V 150°C 500 150°C 500 400 400 25°C 25°C 300 300 200 −55°C 200 −55°C , DC CURRENT GAIN , DC CURRENT GAIN FE FE h h 100 100 0 0 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 12. DC Current Gain at VCE = 5 V Figure 13. DC Current Gain at VCE = 10 V
0.25 0.30 I AGE (V) C/IB = 10 AGE (V) IC/IB = 20 T T 0.25 0.20 VOL 0.20 TION TION VOL 0.15 TURA TURA 0.15 0.10 25°C 150°C 25°C 0.10 150°C 0.05 0.05 −55°C −55°C , COLL−EMITT SA , COLL−EMITT SA 0.00 0.00 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 CE(sat) I CE(sat) I V C, COLLECTOR CURRENT (A) V C, COLLECTOR CURRENT (A)
Figure 14. VCE at IC/IB = 10 Figure 15. VCE at IC/IB = 20
1.20 1.20 AGE (V) IC/IB = 10 AGE (V) IC/IB = 20 T T 1.00 1.00 −55°C −55°C 0.80 TION VOL 0.80 TION VOL 25°C 25°C TURA 0.60 TURA 0.60 150°C 0.40 0.40 150°C 0.20 0.20 , BASE−EMITT SA , BASE−EMITT SA 0.00 0.00 sat) 0.0001 0.001 0.01 0.1 sat) 0.0001 0.001 0.01 0.1 BE( BE( V I V C, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 16. VBE(sat) at IC/IB = 10 Figure 17. VBE(sat) at IC/IB = 20 www.onsemi.com 5
600 600 VCE = 5 V VCE = 10 V 150°C 500 150°C 500 400 400 25°C 25°C 300 300 200 −55°C 200 −55°C , DC CURRENT GAIN , DC CURRENT GAIN FE FE h h 100 100 0 0 0.0001 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 12. DC Current Gain at VCE = 5 V Figure 13. DC Current Gain at VCE = 10 V
0.25 0.30 I AGE (V) C/IB = 10 AGE (V) IC/IB = 20 T T 0.25 0.20 VOL 0.20 TION TION VOL 0.15 TURA TURA 0.15 0.10 25°C 150°C 25°C 0.10 150°C 0.05 0.05 −55°C −55°C , COLL−EMITT SA , COLL−EMITT SA 0.00 0.00 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 CE(sat) I CE(sat) I V C, COLLECTOR CURRENT (A) V C, COLLECTOR CURRENT (A)
Figure 14. VCE at IC/IB = 10 Figure 15. VCE at IC/IB = 20
1.20 1.20 AGE (V) IC/IB = 10 AGE (V) IC/IB = 20 T T 1.00 1.00 −55°C −55°C 0.80 TION VOL 0.80 TION VOL 25°C 25°C TURA 0.60 TURA 0.60 150°C 0.40 0.40 150°C 0.20 0.20 , BASE−EMITT SA , BASE−EMITT SA 0.00 0.00 sat) 0.0001 0.001 0.01 0.1 sat) 0.0001 0.001 0.01 0.1 BE( BE( V I V C, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
Figure 16. VBE(sat) at IC/IB = 10 Figure 17. VBE(sat) at IC/IB = 20 www.onsemi.com 5