Datasheet BC846BDW1, BC847BDW1, BC848CDW1 (ON Semiconductor)

link to page 1 BC846BDW1, BC847BDW1, BC848CDW1 Dual General Purpose Transistors
NPN Duals www.onsemi.com
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.
Features SOT−363/SC−88
• S and NSV Prefixes for Automotive and Other Applications
CASE 419B STYLE 1
Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS (3) (2) (1) Compliant* Q1 Q2
MAXIMUM RATINGS Rating Symbol BC846 BC847 BC848 Unit
(4) (5) (6) Collector − Emitter Voltage VCEO 65 45 30 V Collector − Base Voltage VCBO 80 50 30 V
MARKING DIAGRAM
Emitter − Base Voltage VEBO 6.0 6.0 5.0 V Collector Current − IC 100 100 100 mAdc 6 Continuous 1x MG Stresses exceeding those listed in the Maximum Ratings table may damage the G device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1
THERMAL CHARACTERISTICS
1x = Specific Device Code
Characteristic Symbol Max Unit
x = B, F, G, L M = Date Code Total Device Dissipation PD 380 mW G = Pb−Free Package Per Device 250 mW FR− 5 Board (Note 1) (Note: Microdot may be in either location) TA = 25°C Derate Above 25°C 3.0 mW/°C
ORDERING INFORMATION
Thermal Resistance, RqJA °C/W See detailed ordering and shipping information in the package Junction to Ambient 328 dimensions section on page 6 of this data sheet. Junction and Storage Temperature TJ, Tstg − 55 to +150 °C Range 1. FR−5 = 1.0 x 0.75 x 0.062 in *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2015
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Publication Order Number:
August, 2016 − Rev. 11 BC846BDW1T1/D