Datasheet HMC8120 (Analog Devices) - 9
| Fabricante | Analog Devices |
| Descripción | 71 GHz to 76 GHz, E-Band Variable Gain Amplifier |
| Páginas / Página | 16 / 9 — Data Sheet. HMC8120. GAIN. IIP3. OIP3. m 24. B 10. 3 ( 20. 3 (. ), I. d … |
| Revisión | A |
| Formato / tamaño de archivo | PDF / 362 Kb |
| Idioma del documento | Inglés |
Data Sheet. HMC8120. GAIN. IIP3. OIP3. m 24. B 10. 3 ( 20. 3 (. ), I. d 16. A –5. –10. –15. –20. –5.0. –4.5. –4.0. –3.5. –3.0. –2.5. –2.0. –1.5. –1.0. 250. 230. 210. 190. 170
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Data Sheet HMC8120 36 25 GAIN GAIN IIP3 IIP3 32 OIP3 20 OIP3 28 15 ) ) m 24 m B B 10 d d 3 ( 20 3 ( 5 IP P ), ), I B B d 16 d 0 ( ( IN IN 12 A –5 GA G 8 –10 4 –15 0 –20 –5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
022
250 230 210 190 170 150 130 110 90
024 0- 0-
CONTROL VOTLAGE (V) DRAIN CURRENT (mA)
1315 1315 Figure 23. Gain and Input/Output IP3 vs. Control Voltage, Figure 26. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 71 GHz PIN = −10 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 71 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept)
36 25 GAIN GAIN IIP3 IIP3 32 OIP3 20 OIP3 28 15 ) ) m 24 m B 10 B d 3 ( 20 3 (d IP 5 ), ), IP B B d 16 0 ( (d IN IN A 12 G –5 GA 8 –10 4 –15 0 –20 –5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
7 023
250 230 210 190 170 150 130 110 90
02 0-
CONTROL VOLTAGE (V)
150- 1315
DRAIN CURRENT (mA)
13 Figure 24. Gain and Input/Output IP3 vs. Control Voltage, Figure 27. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 73.5 GHz PIN = −10 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 73.5 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept)
36 25 GAIN GAIN IIP3 IIP3 32 OIP3 20 OIP3 28 15 ) ) m 24 m 10 B B 3 (d 3 (d 20 P 5 ), I ), IP B B d 16 0 ( (d IN IN 12 –5 GA GA 8 –10 4 –15 0 –20 –5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 250 230 210 190 170 150 130 110 90
025 -026 0-
CONTROL VOLTAGE (V) DRAIN CURRENT (mA)
13150 1315 Figure 25. Gain and Input/Output IP3 vs. Control Voltage, Figure 28. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 76 GHz PIN = −10 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 76 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept) Rev. A | Page 9 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE
022
250 230 210 190 170 150 130 110 90
024 0- 0-
CONTROL VOTLAGE (V) DRAIN CURRENT (mA)
1315 1315 Figure 23. Gain and Input/Output IP3 vs. Control Voltage, Figure 26. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 71 GHz PIN = −10 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 71 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept)
36 25 GAIN GAIN IIP3 IIP3 32 OIP3 20 OIP3 28 15 ) ) m 24 m B 10 B d 3 ( 20 3 (d IP 5 ), ), IP B B d 16 0 ( (d IN IN A 12 G –5 GA 8 –10 4 –15 0 –20 –5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0
7 023
250 230 210 190 170 150 130 110 90
02 0-
CONTROL VOLTAGE (V)
150- 1315
DRAIN CURRENT (mA)
13 Figure 24. Gain and Input/Output IP3 vs. Control Voltage, Figure 27. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 73.5 GHz PIN = −10 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 73.5 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept)
36 25 GAIN GAIN IIP3 IIP3 32 OIP3 20 OIP3 28 15 ) ) m 24 m 10 B B 3 (d 3 (d 20 P 5 ), I ), IP B B d 16 0 ( (d IN IN 12 –5 GA GA 8 –10 4 –15 0 –20 –5.0 –4.5 –4.0 –3.5 –3.0 –2.5 –2.0 –1.5 –1.0 250 230 210 190 170 150 130 110 90
025 -026 0-
CONTROL VOLTAGE (V) DRAIN CURRENT (mA)
13150 1315 Figure 25. Gain and Input/Output IP3 vs. Control Voltage, Figure 28. Gain and Input/Output IP3 vs. Drain Current, PIN = −10 dBm/Tone, RF = 76 GHz PIN = −10 dBm/Tone, VCTL1/VCTL2 = −1 V, RF = 76 GHz, Drain Current = (IDD1/IDD2 Fixed at 50 mA) + (IDD3 to IDD6 Swept) Rev. A | Page 9 of 16 Document Outline FEATURES APPLICATIONS GENERAL DESCRIPTION FUNCTIONAL BLOCK DIAGRAM TABLE OF CONTENTS REVISION HISTORY SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS THERMAL RESISTANCE ESD CAUTION PIN CONFIGURATION AND FUNCTION DESCRIPTIONS INTERFACE SCHEMATICS TYPICAL PERFORMANCE CHARACTERISTICS THEORY OF OPERATION TYPICAL APPLICATION CIRCUIT ASSEMBLY DIAGRAM MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GaAs MMICS HANDLING PRECAUTIONS Storage Cleanliness Static Sensitivity Transients General Handling MOUNTING Eutectic Die Attach Epoxy Die Attach WIRE BONDING OUTLINE DIMENSIONS ORDERING GUIDE